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參數(shù)資料
| 型號(hào)： | THN5601SF |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF POWER TRANSISTOR |
| 中文描述： | npn型硅鍺射頻功率晶體管 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 335K |
| 代理商： | THN5601SF |
THN5601SF
DESCRIPTION
The THN5601SF is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-23F SMD package.
The THN5601SF can be used as a driver device or
an output device, depending on the specific app-
lication.
FEATURES
o 4.8 Volt operation
o P1dB 26dBm @f=900MHz
o Power gain 9.0 dB @f=900MHz
PIN CONFIGURATION
PIN NO
1
APPLICATIONS
o Hand-help radio equipment in common
emitter class-AB operation in 900MHz
communication band.
MARKING : AM1
MAXIMUM RATINGS
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Open Emitter
Open Base
Open Collector
Ts = 60
SYMBOL
b
2
3
e
c
20
8
250
800
2.5
DESCRIPTION
base
emitter
collector
SYMBOL
PARAMETER
CONDITION
VALUE
UNIT
V
V
V
mA
mW
-65 ~ 150
150
NPN SiGe RF POWER
TRANSISTOR
SOT-23F
Unit : mm
www.tachyonics.co.kr
-1/11-
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| THN6201KF | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
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