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參數資料
| 型號： | THN6701B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF POWER TRANSISTOR |
| 中文描述： | npn型硅鍺射頻功率晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 262K |
| 代理商： | THN6701B |
□
Features
- High power gain
MAG = 15 dB @ V
CE
= 6 V, I
C
= 400 mA, f = 465 MHz
- High power
P
OUT
= 35 dBm(3W) @ V
CE
= 6 V, I
CQ
= 50 mA, f = 465 MHz
□
Applications
- UHF and VHF wide band amplifier
SOT223
Page 1 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
NPN SiGe RF POWER TRANSISTOR
PreliminarySpecification
THN6701B
□
Absolute Maximum Ratings
(T
A
= 25
℃
)
PIN CONFIGURATION
1. Base
2. Emitter
3. Collector
4. Emitter
Unit in mm
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
150
℃
I
C
1
A
W
Unit
BV
CBO
17
V
Parameter
Symbol
P
tot
4.5
Ratings
℃
T
stg
-65 ~ 150
V
BV
EBO
1.5
V
BV
CEO
12
T
j
6.5
7
3.0
3
1
2
3
4
2.3
4.6
0.7
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