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參數資料
| 型號： | THS1230IPWG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | ADC |
| 英文描述： | 1-CH 12-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDSO28 |
| 封裝： | GREEN, PLASTIC, TSSOP-28 |
| 文件頁數： | 22/25頁 |
| 文件大?。?/td> | 884K |
| 代理商： | THS1230IPWG4 |
www.ti.com
ELECTRICAL CHARACTERISTICS (CONTINUED)
1.5 V
BAND
GAP
REFT
REFB
CT
CB
CTB
THS1230
SLAS291B – OCTOBER 2000 – REVISED MARCH 2004
over recommended operating conditions (AV
DD = DVDD = 3.3 V, fs = 30 MHz/50% duty cycle, MODE = 1, 1-V input span,
internal reference, T
min to Tmax) (unless otherwise noted)
REFT, REFB REFERENCE VOLTAGES (all supplies = 3.3 V)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
INTERNAL REFERENCE(1)
VREFT
Upper reference voltage
2.15
VREFB
Lower reference voltage
1.15
V
VREF
Differential reference voltage, VREFT – VREFB
0.95
1
1.05
Differential reference voltage, VREFT – VREFB accuracy
–5%
5%
EXTERNAL REFERENCE
Externally applied VREFT reference voltage range
2
2.5
Externally applied VREFB reference voltage range
1.05
1.3
V
Externally applied (VREFT – VREFB) reference voltage range
0.75
1.05
External mode VREFT to VREFB impedance
9
k
INTERNAL OR EXTERNAL REFERENCE
CT
VREFT decoupling capacitor value
0.1
CB
VREFB decoupling capacitor value
0.1
F
CTB
Decoupling capacitor VREFT to VREFB
10
(1)
The internal reference voltage is not intended for use driving off chip.
Figure 1. Reference Generation
6
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