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參數資料
| 型號： | THS3120CDG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封裝： | GREEN, PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數： | 23/35頁 |
| 文件大?。?/td> | 975K |
| 代理商： | THS3120CDG4 |
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www.ti.com........................................................................................................................................ SLOS420E – SEPTEMBER 2003 – REVISED OCTOBER 2009
RECOMMENDED OPERATING CONDITIONS
PARAMETER
MIN
NOM
MAX
UNIT
Dual supply
±5
±15
Supply voltage
V
Single supply
10
30
Commercial
0
+70
Operating free-air temperature, TA
°C
Industrial
–40
+85
Operating junction temperature, continuous operating, TJ
–40
+125
°C
Normal storage temperature, TSTG
–40
+85
°C
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature, unless otherwise noted.
PARAMETER
UNIT
Supply voltage, VS– to VS+
33 V
Input voltage, VI
±VS
Differential input voltage, VID
±4 V
Output current, IO
(2)
550 mA
Continuous power dissipation
See Dissipation Ratings Table
Maximum junction temperature, TJ
(3)
+150°C
Maximum junction temperature, continuous operation, long-term reliability, TJ
(4)
+125°C
Commercial
0°C to +70°C
Operating free-air temperature, TA
Industrial
–40°C to +85°C
Storage temperature, TSTG
–65°C to +125°C
HBM
1000
ESD ratings:
CDM
1500
MM
200
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The THS3120 and THS3121 may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected
to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI Technical Brief SLMA002 for more information about using the PowerPAD
thermally-enhanced package.
(3)
The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4)
The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
Copyright 2003–2009, Texas Instruments Incorporated
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| THS3120CDGN | 功能描述:高速運算放大器 Single Lo-Noise Hi-Output RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS3120CDGNG4 | 功能描述:高速運算放大器 Single Lo-Noise Hi-Output RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS3120CDGNR | 功能描述:高速運算放大器 Single Lo-Noise Hi-Output RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS3120CDGNRG4 | 功能描述:高速運算放大器 Single Lo-Noise Hi-Output RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS3120CDR | 功能描述:高速運算放大器 Single Lo-Noise Hi-Output RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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