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參數(shù)資料
| 型號： | THS4221DGN |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
| 封裝： | GREEN, POWERPAD, PLASTIC, MSOP-8 |
| 文件頁數(shù)： | 14/38頁 |
| 文件大小： | 1219K |
| 代理商： | THS4221DGN |
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THS4221, THS4225
THS4222, THS4226
SLOS399G AUGUST 2002 REVISED JANUARY 2004
www.ti.com
21
PDmax +
Tmax–TA
qJA
where:
PDmax is the maximum power dissipation in the amplifier (W).
Tmax is the absolute maximum junction temperature (°C).
TA is the ambient temperature (°C).
θJA = θJC + θCA
θJC is the thermal coefficient from the silicon junctions to the
case (°C/W).
θCA is the thermal coefficient from the case to ambient air
(°C/W).
For systems where heat dissipation is more critical, the
THS4222 family is offered in MSOP with PowerPAD. The
thermal coefficient for the MSOP PowerPAD package is
substantially improved over the traditional SOIC.
Maximum power dissipation levels are depicted in the
graph for the two packages. The data for the DGN
package assumes a board layout that follows the
PowerPAD layout guidelines referenced above and
detailed in the PowerPAD application notes in the
Additional Reference Material section at the end of the
data sheet.
2
1.5
1
0
40
20
0
20
Maximum
Power
Dissipation
W
2.5
3
3.5
40
60
80
TA Ambient Temperature °C
P
D
8-Pin DGN Package
θJA = 170°C/W for 8-Pin SOIC (D)
θJA = 58.4°C/W for 8-Pin MSOP (DGN)
ΤJ = 150°C, No Airflow
Figure 38. Maximum Power Dissipation vs
Ambient Temperature
0.5
8-Pin D Package
When determining whether or not the device satisfies the
maximum power dissipation requirement, it is important to
consider not only quiescent power dissipation, but also
dynamic power dissipation. Often maximum power
dissipation is difficult to quantify because the signal pattern
is inconsistent, but an estimate of the RMS power
dissipation can provide visibility into a possible problem.
DESIGN TOOLS
Evaluation Fixtures, Spice Models, and
Applications Support
Texas Instruments is committed to providing its customers
with the highest quality of applications support. To support
this goal, evaluation boards have been developed for the
THS4222 family of operational amplifiers. The boards are
easy to use, allowing for straight-forward evaluation of the
device. These evaluation boards can be ordered through
the Texas Instruments web site, www.ti.com, or through
your local Texas Instruments sales representative.
Schematics for the two evaluation boards are shown
below with their default component values. Unpopulated
footprints are shown to provide insight into design
flexibility.
Figure 39. THS4222 EVM Circuit
Configuration
VS+
PwrPad
U1:A
R6
R3
J3
R1
R2
R6
R4
J1
J2
TP1
U1:B
R7
R10
J5
R8
R9
R11
R12
J6
J4
+
C6
VS
J7
C7
C9
C5
VS+
J9
+
FB2
C10
C8
FB1
VS
GND
VS+
VS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| THS4221DGNG4 | 功能描述:高速運算放大器 Low-Distortion High Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4221DGNR | 功能描述:高速運算放大器 Low-Distortion High Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4221DGNRG4 | 功能描述:高速運算放大器 Low-Distortion High Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4221DR | 功能描述:高速運算放大器 Low-Distortion High Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4221DRG4 | 功能描述:高速運算放大器 Low-Distortion High Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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