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參數(shù)資料
| 型號： | THS4271DRBR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封裝： | EXPOSED PAD, LEADLESS, PLASTIC, MSOP-8 |
| 文件頁數(shù)： | 26/48頁 |
| 文件大小： | 1227K |
| 代理商： | THS4271DRBR |
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L(nH) + K ln
2
W ) T
) 0.223
W ) T ) 0.5
where:
W = Width of trace in inches.
= Length of the trace in inches
.
T = Thickness of the trace in inches.
K = 5.08 for dimensions in inches, and K = 2 for dimensions
in cm.
R1
R5
J2
Vin+
R6
Vs+
U1
2
3
6
7
4 1
8
J8
Power Down Ref
Vs+
R8
C8
Vs
R4
R7
C7
J9
Power Down
R2
J4
Vout
Vs
R9
R3
J1
Vin
TP1
+
C1
VS
J7
C6
C5
C2
VS+
J5
+
FB2
C4
C3
FB1
VS
GND
VS+
J6
_
+
SLOS397F – JULY 2002 – REVISED OCTOBER 2009
www.ti.com
The peaking in the frequency response is due to the
lead inductance in the feedback path. Each pad and
trace on a PCB has an inductance associated with it,
which in conjunction with the inductance associated
with the package may cause peaking in the frequency
response, causing the device to become unstable.
In order to achieve the maximum performance of the
device, PCB layout is very critical. Texas Instruments
has developed an EVM for the evaluation of the
THS4271 in a gain of 1. The EVM is shown in
Figure 101 through Figure 104. This EVM is designed
to minimize peaking in the unity gain configuration.
Minimizing the inductance in the feedback path is
critical for reducing the peaking of the frequency
response in unity gain. The recommended maximum
inductance allowed in the feedback path is 4 nH. This
can be calculated by using Equation 8.
(8)
space
Figure 95. THS4271/THS4275 EVM
Circuit Configuration
32
Copyright 2002–2009, Texas Instruments Incorporated
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| THS4271DRBRG4 | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4271DRBT | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4271DRBTG4 | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4271DRG4 | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4271-EP | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FEEDBACK AMPLIFIER |
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