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參數資料
| 型號： | THS4275DGNRG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封裝： | POWERPAD, PLASTIC, MSOP-8 |
| 文件頁數： | 24/49頁 |
| 文件大?。?/td> | 1515K |
| 代理商： | THS4275DGNRG4 |
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P
D +
Tmax * TA
q
JA
where:
PD = Maximum power dissipation of THS4271 (watts)
TMAX = Absolute maximum junction temperature (150°C)
TA = Free-ambient temperature (°C)
θJA = θJC + θCA
θJC = Thermal coefficient from junction to the case
θCA = Thermal coefficient from the case to ambient air
(
°C/W).
P
Dmax +
Tmax–TA
q
JA
where:
PDmax is the maximum power dissipation in the amplifier (W).
Tmax is the absolute maximum junction temperature (°C).
TA is the ambient temperature (°C).
θJA = θJC + θCA
θJC is the thermal coefficient from the silicon junctions to the
case (
°C/W).
θCA is the thermal coefficient from the case to ambient air
(
°C/W).
2
1.5
1
0
40
20
0
20
Maximum
Power
Dissipation
W
2.5
3
3.5
40
60
80
TA Ambient Temperature °C
P
D
8-Pin DGN Package
θJA = 170°C/W for 8-Pin SOIC (D)
θJA = 58.4°C/W for 8-Pin MSOP (DGN)
TJ = 150°C, No Airflow
0.5
8-Pin D Package
SLOS397F – JULY 2002 – REVISED OCTOBER 2009
www.ti.com
For a given
θJA, the maximum power dissipation is
The thermal characteristics of the device are dictated
shown in Figure 91 and is calculated by the
by the package and the PCB. Maximum power
dissipation for a given package can be calculated
using the following formula.
(6)
The next consideration is the package constraints.
The two sources of heat within an amplifier are
(7)
quiescent power and output power. The designer
should
never
forget
about
the
quiescent
heat
For systems where heat dissipation is more critical,
generated within the device, especially multi-amplifier
the THS4271 is offered in an 8-pin MSOP with
devices. Because these devices have linear output
PowerPAD. The thermal coefficient for the MSOP
stages (Class AB), most of the heat dissipation is at
PowerPAD package is substantially improved over
low output voltages with high output currents.
the traditional SOIC. Maximum power dissipation
levels are depicted in the graph for the two packages.
The other key factor when dealing with power
The data for the DGN package assumes a board
dissipation is how the devices are mounted on the
layout that follows the PowerPAD layout guidelines
PCB. The PowerPAD devices are extremely useful
referenced above and detailed in the PowerPAD
for heat dissipation. But, the device should always be
application notes in the Additional Reference Material
soldered to a copper plane to fully use the heat
section at the end of the data sheet.
dissipation properties of the PowerPAD. The SOIC
package, on the other hand, is highly dependent on
how it is mounted on the PCB. As more trace and
copper area is placed around the device,
θ JA
decreases
and
the
heat
dissipation
capability
increases. For a single package, the sum of the RMS
output currents and voltages should be used to
choose the proper package.
THERMAL ANALYSIS
The THS4271 device does not incorporate automatic
thermal shutoff protection, so the designer must take
care to ensure that the design does not violate the
absolute
maximum
junction
temperature
of
the
device. Failure may result if the absolute maximum
junction temperature of +150° C is exceeded.
Figure 91. Maximum Power Dissipation
vs Ambient Temperature
When determining whether or not the device satisfies
the maximum power dissipation requirement, it is
important to consider not only quiescent power
dissipation, but also dynamic power dissipation. Often
maximum power is difficult to quantify because the
signal pattern is inconsistent, but an estimate of the
RMS power dissipation can provide visibility into a
possible problem.
30
Copyright 2002–2009, Texas Instruments Incorporated
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相關代理商/技術參數 |
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|---|---|
| THS4275DR | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4275DRBR | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4275DRBRG4 | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4275DRBT | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4275DRBTG4 | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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