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參數資料
| 型號： | THS4601IDDAG3 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封裝： | GREEN, PLASTIC, SOP-8 |
| 文件頁數： | 14/34頁 |
| 文件大小： | 826K |
| 代理商： | THS4601IDDAG3 |
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THS4601
SLOS388B OCTOBER 2001 REVISED JUNE 2002
21
www.ti.com
APPLICATION INFORMATION
power dissipation and thermal characteristics
The THS4601 does not incorporate automatic thermal shutoff protection, so the designer must take care to
ensure that the design does not violate the absolute maximum junction temperature of the device. Failure may
result if the absolute maximum junction temperature of 150
°C is exceeded.
The thermal characteristics of the device are dictated by the package and the PC board. Maximum power
dissipation for a given package can be calculated using the following formula.
P
Dmax +
Tmax–TA
q
JA
Where:
PDmax is the maximum power dissipation (W)
Tmax is the absolute maximum junction temperature (°C)
TA is the ambient temperature (°C)
θJA is the thermal coefficient from the silicon junctions to the ambient air (°C/W)
For systems where heat dissipation is more critical, the THS4601 is offered in an 8-pin SOIC with PowerPAD.
The thermal coefficient for the SOIC PowerPAD is substantially improved over the traditional SOIC. Maximum
power dissipation levels are depicted in the graph for the two packages. The data for the 8DDA package
assumes a board layout that follows the PowerPAD layout guidelines.
0
0.5
1
1.5
2
2.5
3
40
20
0
20
40
60
80
8DDA Package
8D Package
θJA = 170°C/W for 8D,
θJA = 66.6°C/W for 8DDA
Ambient Temperature
°C
Maximum
Power
Dissipation
W
MAXIMUM POWER DISSIPATION
vs
TEMPERATURE
Figure 40
When determining whether or not the device satisfies the maximum power dissipation requirement, it is
important to not only consider quiescent power dissipation, but also dynamic power dissipation. Often times,
this is difficult to quantify because the signal pattern is inconsistent, but an estimate of the RMS power
dissipation can provide visibility into a possible problem.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| THS4601IDDAR | 功能描述:高速運算放大器 Wideband FET-Input Op Amp RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4601IDDARG3 | 功能描述:高速運算放大器 Wideband FET-Input Op Amp RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4601IDG4 | 功能描述:高速運算放大器 Wideband FET-Input Op Amp RoHS:否 制造商:Texas Instruments 通道數量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4601MUV | 制造商:Texas Instruments 功能描述:EVALUATION PART 10PIN CERAMIC FLATPACK - Rail/Tube |
| THS4631 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER |
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