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參數資料
型號: THS7374IPWRG4
廠商: TEXAS INSTRUMENTS INC
元件分類: 音頻/視頻放大
英文描述: 4 CHANNEL, VIDEO AMPLIFIER, PDSO14
封裝: GREEN, PLASTIC, TSSOP-14
文件頁數: 12/40頁
文件大小: 929K
代理商: THS7374IPWRG4
SLOS590B – JULY 2008 – REVISED JANUARY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)(2)
PRODUCT
PACKAGE-LEAD
TRANSPORT MEDIA, QUANTITY
ECO STATUS(2)
THS7374IPW
Rails, 90
TSSOP-14
Pb-Free, Green
THS7374IPWR
Tape and Reel, 2000
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree.
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range unless otherwise noted.
THS7374
UNIT
Supply voltage, VS+ to GND
5.5
V
Input voltage, VI
–0.4 to VS
V
Output current, IO
100
mA
Continuous power dissipation
Maximum junction temperature, any condition(2) TJ
+150
°C
Maximum junction temperature, continuous operation, long-term
+125
°C
reliability(3), TJ
Storage temperature range, TSTG
–65 to +150
°C
Human body model (HBM)
2000
V
ESD ratings
Charged device model (CDM)
1000
V
Machine model (MM)
200
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
DISSIPATION RATINGS
qJC
qJA
AT TA ≤ +25°C
AT TA = +85°C
PACKAGE
(°C/W)
POWER RATING
TSSOP-14 (PW)
35
115
870 mW
348 mW
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
Supply voltage, VS+
3
5
V
Ambient temperature, TA
–40
+85
°C
2
Copyright 2008–2011, Texas Instruments Incorporated
Product Folder Link(s): THS7374
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