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參數資料
| 型號： | TIC108M |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 矽控整流器 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 162K |
| 代理商： | TIC108M |
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
APRIL 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
5 A Continuous On-State Current
G
20 A Surge-Current
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
Max I
GT
of 1 mA
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC108D
TIC108M
TIC108S
TIC108N
TIC108D
TIC108M
TIC108S
TIC108N
V
DRM
400
600
700
800
400
600
700
800
5
V
Repetitive peak reverse voltage
V
RRM
V
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width
≤
300
μ
s)
Peak gate power dissipation (pulse width
≤
300
μ
s)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
A
I
T(AV)
3.2
A
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
20
0.2
1.3
0.3
A
A
W
W
°C
°C
°C
-40 to +110
-40 to +125
230
相關PDF資料 |
PDF描述 |
|---|---|
| TIC108N | SILICON CONTROLLED RECTIFIERS |
| TIC108S | SILICON CONTROLLED RECTIFIERS |
| TIC116 | SILICON CONTROLLED RECTIFIERS |
| TIC116D | SILICON CONTROLLED RECTIFIERS |
| TIC116M | SILICON CONTROLLED RECTIFIERS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIC108M-S | 功能描述:雙向可控硅 600V 5A SCR RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| TIC108N | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON CONTROLLED RECTIFIERS |
| TIC108N-S | 功能描述:雙向可控硅 800V 5A SCR RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| TIC108S | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON CONTROLLED RECTIFIERS |
| TIC116 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON CONTROLLED RECTIFIERS |
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