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參數資料
| 型號： | TIC226 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 158K |
| 代理商： | TIC226 |
TIC226 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
APRIL 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
8 A RMS, 70 A Peak
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
SYMBOL
VALUE
400
600
700
800
8
70
80
±1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC226D
TIC226M
TIC226S
TIC226N
V
DRM
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
≤
200
μ
s)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
A
A
A
A
W
W
°C
°C
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0
T
C
= 110°C
±2
mA
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
2
-12
-9
20
0.7
-0.8
-0.8
0.9
50
-50
-50
mA
V
GTM
Peak gate trigger
voltage
2
-2
-2
2
V
All voltages are with respect to Main Terminal 1.
相關PDF資料 |
PDF描述 |
|---|---|
| TIC226D | SILICON TRIACS |
| TIC226M | SILICON TRIACS |
| TIC226N | SILICON TRIACS |
| TIC226S | SILICON TRIACS |
| TIC236 | SILICON TRIACS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIC226A | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226A_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226B | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226C | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226D | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON TRIACS |
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