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參數資料
| 型號： | TIC253D |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 103K |
| 代理商： | TIC253D |
TIC253 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
High Current Triacs
G
20 A RMS
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
150 A Peak Current
G
Max I
GT
of 50 mA (Quadrants 1 - 3)
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2AD
MT1
MT2
G
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 500 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
SYMBOL
VALUE
400
600
700
800
20
150
±1
-40 to +110
-40 to +125
230
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC253D
TIC253M
TIC253S
TIC253N
V
DRM
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
A
A
A
°C
°C
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= Rated V
DRM
I
G
= 0
T
C
= 110°C
±2
mA
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
I
TM
= ±28.2 A
V
supply
= +12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
I
G
= 50 mA
I
G
= 0
I
G
= 0
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
(see Note 4)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
7
-15
-16
28
0.7
-0.7
-0.8
0.8
±1.4
6
-13
50
-50
-50
mA
V
GTM
Peak gate trigger
voltage
2
-2
-2
2
V
V
TM
Peak on-state voltage
±1.7
40
-40
V
I
H
Holding current
mA
All voltages are with respect to Main Terminal 1.
NOTE
4: This parameter must be measured using pulse techniques, t
p
=
≤
1 ms, duty cycle
≤
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
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PDF描述 |
|---|---|
| TIC253M | SILICON TRIACS |
| TIC253N | SILICON TRIACS |
| TIC253S | SILICON TRIACS |
| TIC256 | SILICON TRIACS |
| TIC256D | SILICON TRIACS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIC253D-S | 功能描述:雙向可控硅 400V 20A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| TIC253M | 制造商:Bourns Inc 功能描述:TRIAC 600V 20A |
| TIC253M-S | 功能描述:雙向可控硅 600V 20A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| TIC253N | 制造商:Bourns Inc 功能描述: |
| TIC253N-S | 功能描述:雙向可控硅 800V 20A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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