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參數資料
| 型號： | TICP206D |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 127K |
| 代理商： | TICP206D |
TICP206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MARCH 1988 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
1.5 A RMS
G
Glass Passivated Wafer
G
400 V to 600 V Off-State Voltage
G
Max I
GT
of 10 mA
G
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
(TOP VIEW)
MDC2AA
G
MT2
MT1
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
MDC2AB
MT2
MT1
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
400
600
1.5
10
12
±0.2
0.3
-40 to +110
-40 to +125
230
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP206D
TICP206M
V
DRM
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
TSM
I
GM
P
G(AV)
T
C
T
stg
T
L
A
A
A
A
W
°C
°C
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak off-
state current
V
D
= rated V
DRM
I
G
= 0
±20
μ
A
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
8
-8
-8
10
2.5
-2.5
-2.5
2.5
mA
V
GTM
Peak gate trigger
voltage
V
All voltages are with respect to Main Terminal 1.
相關PDF資料 |
PDF描述 |
|---|---|
| TICP206M | SILICON TRIACS |
| TIL111 | PHOTOTRANSISTOR OPTOISOLATOR |
| TIL111 | GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| TIL111-M | GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TICP206D | 制造商:Bourns Inc 功能描述:TRIAC 1.5A 400V TO-92 |
| TICP206D-R | 制造商:Bourns Inc 功能描述: |
| TICP206D-R-S | 功能描述:雙向可控硅 400V 2A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| TICP206D-S | 功能描述:雙向可控硅 400V 2A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| TICP206M | 制造商:Bourns Inc 功能描述:TRIAC 1.5A 600V TO-92 |
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