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參數(shù)資料
| 型號： | TIM7785-35SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 187K |
| 代理商： | TIM7785-35SL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-35SL
TECHNICAL DATA
FE AT URE S
n
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Po= 35.0dBm,
Single Carrier Level
n
HIGH POWER
P1dB=45.5dBm at 7.7GHz to 8.5GHz
n
HIGH GAIN
G1dB=6.0dB at 7.7GHz to 8.5GHz
n
BROAD BAND INTERNALLY MATCHED FET
n
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended Gate Resistance(Rg): 28
(Max.)
SYMBOL
P
1dB
CONDITIONS
UNIT
dBm
MIN.
45.0
TYP.
45.5
MAX.
G
1dB
dB
5.0
6.0
I
DS1
G
η
add
IM
3
A
dB
%
dBc
-42
8.0
33
-45
9.0
±
0.8
V
DS
=10
V
f
= 7.7 to 8.5GHz
I
DS2
Tch
Two-Tone Test
Po=35.0dBm
(Single Carrier Level)
V
DS
X I
DS
X R
th(c-c)
A
°
C
8.0
9.0
100
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 10.5A
V
DS
=
3V
I
DS
= 140mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -420
μ
A
UNIT
mS
MIN.
TYP.
6500
MAX.
Pinch-off Voltage
V
GSoff
V
-1.0
-2.5
-4.0
Saturated Drain Current
I
DSS
A
20
26
Gate-Source Breakdown
Voltage
Thermal Resistance
V
GSO
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.0
1.3
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Nov. 2003
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