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參數資料
| 型號： | TIP100 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| 中文描述： | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | TIP100 |
2000 Fairchild Semiconductor International
Rev. B, February 2000
T
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage : TIP100
: TIP101
: TIP102
V
CEO
Collector-Emitter Voltage : TIP100
: TIP101
: TIP102
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
a
=25
°
C)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
Value
60
80
100
60
80
100
5
8
15
1
2
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
Min.
Max.
Units
: TIP100
: TIP101
: TIP102
I
C
= 30mA, I
B
= 0
60
80
100
V
V
V
I
CEO
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
50
50
50
μ
A
μ
A
μ
A
I
CBO
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
V
CE
= 60V, I
E
= 0
V
CE
= 80V, I
E
= 0
V
CE
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 8A
I
C
= 3A, I
B
= 6mA
I
C
= 8A, I
B
= 80mA
V
CE
= 4V, I
C
= 8A
V
CB
= 10V, I
E
= 0, f = 0.1MHz
50
50
50
2
2000
μ
A
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
1000
200
V
CE
(sat)
Collector-Emitter Saturation Voltage
2
2.5
2.8
200
V
V
V
pF
V
BE
(on)
C
ob
Base-Emitter ON Voltage
Output Capacitance
TIP100/101/102
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : h
FE
=1000 @ V
CE
=4v, I
C
=3A (Min.)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use
Complementary to TIP105/106/107
1.Base 2.Collector 3.Emitter
TO-220
1
Equivalent Circuit
B
E
C
R1
R2
相關PDF資料 |
PDF描述 |
|---|---|
| TIP101 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP102 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP101 | Plastic Medium(塑料中等功率互補型硅晶體管) |
| TIP102 | Plastic Medium(塑料中等功率互補型硅晶體管) |
| TIP105 | Plastic Medium(塑料中等功率互補型硅晶體管) |
相關代理商/技術參數 |
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|---|---|
| TIP100_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium−Power Complementary Silicon Transistors |
| TIP100_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Darlington Transistor |
| TIP100_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Plastic Medium-Power Silicon Transistors |
| TIP100-BP | 功能描述:兩極晶體管 - BJT NPN 60V 8A 80W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP100G | 功能描述:達林頓晶體管 8A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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