- 您現在的位置：買賣IC網 > PDF目錄384976 > TIP105 (FAIRCHILD SEMICONDUCTOR CORP) PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) PDF資料下載
參數資料
| 型號： | TIP105 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| 中文描述： | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 98K |
| 代理商： | TIP105 |
2000 Fairchild Semiconductor International
Rev. B, February 2000
T
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage : TIP105
: TIP106
: TIP107
V
CEO
Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
a
=25
°
C)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
Value
- 60
- 80
- 100
- 60
- 80
- 100
- 5
- 8
- 15
- 1
2
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
Min.
Max.
Units
: TIP105
: TIP106
: TIP107
I
C
= -30mA, I
B
= 0
-60
-80
-100
V
V
V
I
CEO
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
V
CE
= -30V, I
B
= 0
V
CE
= -40V, I
B
= 0
V
CE
= -50V, I
B
= 0
-50
-50
-50
μ
A
μ
A
μ
A
I
CBO
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CB
= -100V, I
E
= 0
V
BE
= -5V, I
C
= 0
V
CE
= -4V, I
C
= -3A
V
CE
= -4V, I
C
= -8A
I
C
= -3A, I
B
= -6mA
I
C
= -8A, I
B
= -80mA
V
CE
= -4V, I
C
= -8A
V
CB
= -10V, I
E
= 0, f = 0.1MHz
-50
-50
-50
-2
20000
μ
A
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
1000
200
V
CE
(sat)
Collector-Emitter Saturation Voltage
-2
-2.5
-2.8
300
V
V
V
pF
V
BE
(on)
C
ob
Base-Emitter ON Voltage
Output Capacitance
TIP105/106/107
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : h
FE
=1000 @ V
CE
= -4v, I
C
= -3A (Min.)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use
Complementary to TIP100/101/102
1.Base 2.Collector 3.Emitter
TO-220
1
Equivalent Circuit
B
E
C
R1
R2
相關PDF資料 |
PDF描述 |
|---|---|
| TIP122 | Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補型晶體管) |
| TIP126 | Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補型晶體管) |
| TIP127 | Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補型晶體管) |
| TIP131 | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
| TIP132 | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIP105 | 制造商:Fairchild Semiconductor Corporation 功能描述:DARLINGTON BIPOLAR TRANSISTOR ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:DARLINGTON TRANSISTOR, PNP, -60V, TO-220 |
| TIP105_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:PNP SILICON POWER DARLINGTON TRANSISTOR |
| TIP105-BP | 制造商:Micro Commercial Components (MCC) 功能描述:PNP PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
| TIP105G | 功能描述:達林頓晶體管 8A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP105-S | 功能描述:達林頓晶體管 PNP DARLINGTON 60V 8A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。