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參數資料
| 型號： | TIP123 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Si-Epitaxial PlanarTransistors |
| 中文描述： | 硅外延PlanarTransistors |
| 文件頁數： | 1/2頁 |
| 文件大小： | 49K |
| 代理商： | TIP123 |
1
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
1
TIP120, TIP121, TIP122
Darlington Transistors
NPN
Si-Epitaxial
PlanarTransistors
Si-Epitaxial PlanarTransistoren
NPN
Version 2004-06-21
Collector current – Kollektorstrom
5 A
Plastic case
Kunststoffgehuse
TO-220AB
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
1 = B1
2 = C2
3 = E2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25°C)
Grenzwerte
(T
A
= 25°C)
TIP121
80 V
TIP120
60 V
TIP122
100 V
Collector-Emitter-voltage
B open
V
CE0
V
CB0
V
EB0
Collector-Base-voltage
E open
60 V
80 V
100 V
Emitter-Base-voltage
C open
50 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
T
C
= 25°C
P
tot
P
tot
I
C
2 W
1
)
65 W
Collector current – Kollektorstrom (dc)
5 A
Peak Collector current – Kollektor-Spitzenstrom I
CM
Base current – Basisstrom (dc)
8 A
I
B
T
j
T
S
120 mA
Junction temperature – Sperrschichttemperatur
- 65…+ 150°C
Storage temperature – Lagerungstemperatur
- 65…+ 150°C
Characteristics (T
j
= 25°C)
Kennwerte (T
j
= 25°C)
Typ.
Min.
Max.
Collector-Emitter cutoff current – Kollektorreststrom
I
B
= 0, V
CE
= 30 V
I
B
= 0, V
CE
= 40 V
I
B
= 0, V
CE
= 50 V
Collector-Base cutoff current – Kollektorreststrom
TIP120
TIP121
TIP123
I
CE0
I
CE0
I
CE0
–
–
–
–
–
–
500 nA
500 nA
500 nA
I
E
= 0, V
CB
= 60 V
I
E
= 0, V
CB
= 80 V
I
E
= 0, V
CB
= 100 V
TIP120
TIP121
TIP122
I
CB0
I
CB0
I
CB0
–
–
–
–
–
–
200 nA
200 nA
200 nA
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| TIP126 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TIP125 | 功能描述:達林頓晶體管 PNP Epitaxial Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP125 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP125_07 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Si-Epitaxial Planar Darlington Power Transistors |
| TIP125_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Darlington Transistor |
| TIP125_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP Darlington Power Transistors |
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