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參數資料
| 型號： | TIP36A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon High(互補型硅高功率晶體管) |
| 中文描述： | 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 80K |
| 代理商： | TIP36A |
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 5
1
Publication Order Number:
TIP35A/D
TIP35A, TIP35B, TIP35C
(NPN); TIP36A, TIP36B,
TIP36C (PNP)
TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices
Complementary Silicon
HighPower Transistors
Designed for generalpurpose power amplifier and switching
applications.
Features
25 A Collector Current
Low Leakage Current
I
CEO
= 1.0 mA @ 30 and 60 V
Excellent DC Gain
h
FE
= 40 Typ @ 15 A
High Current Gain Bandwidth Product
h
fe
= 3.0 min @ I
C
= 1.0 A, f = 1.0 MHz
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
Unit
Collector Emitter Voltage
V
CEO
V
CB
V
EB
I
C
60
80
100
Vdc
Collector Base Voltage
60
80
100
Vdc
Emitter Base Voltage
5.0
Vdc
Collector Current
Continuous
Peak (Note 1)
25
40
Adc
Base Current Continuous
I
B
P
D
5.0
Adc
Total Power Dissipation
@ T
C
= 25 C
Derate above 25 C
125
W
W/ C
Operating and Storage
Junction Temperature Range
T
J
, T
stg
65 to +150
C
Unclamped Inductive Load
E
SB
90
mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoCase
R
JC
1.0
°
C/W
JunctionToFreeAir
Thermal Resistance
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle
R
JA
35.7
°
C/W
10%.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT93 (TO218)
CASE 340D
STYLE 1
MARKING DIAGRAM
A
Y
WW
TIP3xx
xx
= Assembly Location
= Year
= Work Week
= Device Code
= 5A, 5B, 5C
6A, 6B, 6C
= PbFree Package
G
AYWWG
TIP3xx
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TIP36AG | 功能描述:兩極晶體管 - BJT 25A 60V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP36A-S | 功能描述:兩極晶體管 - BJT 60V 25A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP36B | 功能描述:兩極晶體管 - BJT TO-218 PNP GP POWER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP36BG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon High?Power Transistors |
| TIP36B-S | 功能描述:兩極晶體管 - BJT 80V 25A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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