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參數(shù)資料
| 型號： | TIP41CF |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
| 中文描述： | 外延平面NPN晶體管（通用） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | TIP41CF |
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP41CF
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP42CF.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
Φ3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
6
A
Pulse
ICP
10
Base Current
IB
2
A
Collector Power
Dissipation
Ta=25
PC
2
W
Tc=25
25
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Emitter Sustaining Voltage
VCEO(SUS)
IC=30mA, IB=0
100
-
V
Collector Cut-off Current
ICEO
VCE=60V, IB=0
-
0.7
mA
Collector Cut-off Current
ICES
VCE=100V, VEB=0
-
400
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
1
mA
DC Current Gain
hFE
VCE=4V, IC=0.3A
30
-
VCE=4V, IC=3A
15
-
75
Collector-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=600mA
-
1.5
V
Base-Emitter On Voltage
VBE(on)
VCE=4V, IC=6A
-
2.0
V
Transition Frequency
fT
VCE=10V, IC=500mA
3.0
-
MHz
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| TIP41CG | 功能描述:兩極晶體管 - BJT 6A 100V 65W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| TIP41CL-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EXPITAXIAL PLANAR TRANSISTOR |
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