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參數資料
型號: TIP42A
廠商: Boca Semiconductor Corp.
英文描述: General Purpose Amplifier and Switching Applications
中文描述: 通用放大器和開關應用
文件頁數: 1/2頁
文件大小: 34K
代理商: TIP42A
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP42CF
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP41CF.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70
0.30
0.85 MAX
Φ
3.20
0.20
3.00
0.30
A
B
C
D
E
F
G
H
12.30 MAX
0.75 MAX
13.60
0.50
3.90 MAX
1.20
1.30
2.54
4.50
0.20
6.80
2.60
0.20
10
25
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
2.60
0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-6
A
Pulse
I
CP
-10
Base Current
I
B
-2
A
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
25
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=-30mA, I
B
=0
-100
-
-
V
Collector Cut-off Current
I
CEO
V
CE
=-60V, I
B
=0
-
-
-0.7
mA
Collector Cut-off Current
I
CES
V
CE
=-100V, V
EB
=0
-
-
-400
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1
mA
DC Current Gain
h
FE
V
CE
=-4V, I
C
=-0.3A
30
-
-
V
CE
=-4V, I
C
=-3A
15
-
75
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-6A, I
B
=-600mA
-
-
-1.5
V
Base-Emitter On Voltage
V
BE(on)
V
CE
=-4V, I
C
=-6A
-
-
-2.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-500mA
3.0
-
-
MHz
相關PDF資料
PDF描述
TIP42B General Purpose Amplifier and Switching Applications
TIP42C General Purpose Amplifier and Switching Applications
TIP42 PNP EPITAXIAL SILICON TRANSISTOR(MEDIUM POWER LINEAR SWITCHING APPLICATIONS)
TIP42A PNP EPITAXIAL SILICON TRANSISTOR(MEDIUM POWER LINEAR SWITCHING APPLICATIONS)
TIP42B PNP EPITAXIAL SILICON TRANSISTOR(MEDIUM POWER LINEAR SWITCHING APPLICATIONS)
相關代理商/技術參數
參數描述
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