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參數(shù)資料
| 型號(hào)： | TIP42B |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PNP SILICON POWER TRANSISTORS |
| 中文描述： | 進(jìn)步黨硅功率晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 34K |
| 代理商： | TIP42B |
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP42CF
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP41CF.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70
0.30
0.85 MAX
Φ
3.20
0.20
3.00
0.30
A
B
C
D
E
F
G
H
12.30 MAX
0.75 MAX
13.60
0.50
3.90 MAX
1.20
1.30
2.54
4.50
0.20
6.80
2.60
0.20
10
25
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
2.60
0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-6
A
Pulse
I
CP
-10
Base Current
I
B
-2
A
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
25
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=-30mA, I
B
=0
-100
-
-
V
Collector Cut-off Current
I
CEO
V
CE
=-60V, I
B
=0
-
-
-0.7
mA
Collector Cut-off Current
I
CES
V
CE
=-100V, V
EB
=0
-
-
-400
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1
mA
DC Current Gain
h
FE
V
CE
=-4V, I
C
=-0.3A
30
-
-
V
CE
=-4V, I
C
=-3A
15
-
75
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-6A, I
B
=-600mA
-
-
-1.5
V
Base-Emitter On Voltage
V
BE(on)
V
CE
=-4V, I
C
=-6A
-
-
-2.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-500mA
3.0
-
-
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP42C | PNP SILICON POWER TRANSISTORS |
| TIP42C | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
| TIP42C | COMPLEMENTARY SILICON POWER TRANSISTORS |
| TIP42C | Mini size of Discrete semiconductor elements |
| TIP42C | POWER TRANSISTORS COMPLEMENTARY SILICON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP42B_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| TIP42B-BP | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP Power Transistors |
| TIP42BG | 功能描述:兩極晶體管 - BJT 6A 80V 65W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP42-BP | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP Power Transistors |
| TIP42B-S | 功能描述:兩極晶體管 - BJT 80V 6A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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