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參數資料
| 型號： | TIP42B |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistors(互補型，塑料功率晶體管) |
| 中文描述： | 6 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 74K |
| 代理商： | TIP42B |
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 6
1
Publication Order Number:
TIP41A/D
TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
ESD Ratings:
Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V0 @ 0.125 in
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
V
CEO
40
60
80
100
Vdc
CollectorBase Voltage
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
V
CB
40
60
80
100
Vdc
EmitterBase Voltage
V
EB
I
C
5.0
Vdc
Collector Current
Continuous
Peak
6.0
10
Adc
Base Current
I
B
P
D
2.0
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
65
0.52
W
W/
°
C
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
2.0
0.016
W
W/
°
C
Unclamped Inductive Load Energy
(Note 1)
E
62.5
mJ
Operating and Storage Junction,
Temperature Range
T
J
, T
stg
–65 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
R
JA
1.67
°
C/W
°
C/W
Thermal Resistance, JunctiontoAmbient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. I
C
= 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V
CC
= 10 V, R
BE
= 100 .
57
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
406080100 VOLTS,
65 WATTS
http://onsemi.com
123
4
TIP4xx
xx
= Device Code
= 1, 1A, 1B, 1C
2, 2A, 2B, 2C
= Assembly Location
= Year
= Work Week
= PbFree Package
A
Y
WW
G
TIP4xxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
相關PDF資料 |
PDF描述 |
|---|---|
| TIP42C | Complementary Silicon Plastic Power Transistors(互補型，塑料功率晶體管) |
| TIP41CP | NPN Epitaxial Silicon Transistor（Medium Power Linear Switching Applications）(NPN硅外延晶體管（應用于中等功率線性開關）) |
| TIP42B | POWER TRANSISTORS COMPLEMENTARY SILICON |
| TIP42B | PNP Epitaxial Silicon Transistor（Medium Power Linear Switching Applications）(PNP硅外延晶體管（應用于中等功率線性開關）) |
| TIP42C | PNP Epitaxial Silicon Transistor（Medium Power Linear Switching Applications）(PNP硅外延晶體管（應用于中等功率線性開關）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIP42B_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| TIP42B-BP | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP Power Transistors |
| TIP42BG | 功能描述:兩極晶體管 - BJT 6A 80V 65W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP42-BP | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP Power Transistors |
| TIP42B-S | 功能描述:兩極晶體管 - BJT 80V 6A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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