- 您現在的位置：買賣IC網 > PDF目錄361456 > TIPL762 (Power Innovations International, Inc.) RES 18 OHM 1% 3W SILICONE WW PDF資料下載
參數資料
| 型號： | TIPL762 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | RES 18 OHM 1% 3W SILICONE WW |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 168K |
| 代理商： | TIPL762 |
TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
AUGUST 1978 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Rugged Triple-Diffused Planar Construction
G
6 A Continuous Collector Current
G
Operating Characteristics Fully Guaranteed
at 100°C
G
1000 Volt Blocking Capability
G
120 W at 25°C Case Temperature
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTE
1: This value applies for t
p
≤
10 ms, duty cycle
≤
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIPL762
TIPL762A
TIPL762
TIPL762A
TIPL762
TIPL762A
V
CBO
850
1000
850
1000
400
450
10
6
12
120
V
Collector-emitter voltage (V
BE
= 0)
V
CES
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
V
A
A
W
°C
°C
-65 to +150
-65 to +150
相關PDF資料 |
PDF描述 |
|---|---|
| TIPL762A | NPN SILICON POWER TRANSISTORS |
| TIPL765 | NPN SILICON POWER TRANSISTORS |
| TIPL765A | NPN SILICON POWER TRANSISTORS |
| TIPL765 | RES 1.0K OHM 1% 3W SILICONE WW |
| TIPL765A | NPN SILICON POWER TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIPL762A | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON POWER TRANSISTORS |
| TIPL762A-S | 功能描述:兩極晶體管 - BJT 1000V 6A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPL762-S | 功能描述:兩極晶體管 - BJT 850V 6A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPL763 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 8A I(C) | TO-218AA |
| TIPL763A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 8A I(C) | TO-218AA |
發布緊急采購，3分鐘左右您將得到回復。