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參數資料
| 型號： | TIPP31B |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 88K |
| 代理商： | TIPP31B |
TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1989 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
20 W Pulsed Power Dissipation
G
100 V Capability
G
2 A Continuous Collector Current
G
4 A Peak Collector Current
G
Customer-Specified Selections Available
LP PACKAGE
(TOP VIEW)
MDTRAB
E
C
B
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.
3. V
CE
= 20 V, I
C
= 1 A, t
p
= 10 ms, duty cycle
≤
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIPP31
TIPP31A
TIPP31B
TIPP31C
TIPP31
TIPP31A
TIPP31B
TIPP31C
V
CBO
40
60
80
100
40
60
80
100
5
2
4
1
0.8
20
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Pulsed power dissipation (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
I
CM
I
B
P
tot
P
T
T
j
T
stg
T
L
V
A
A
A
W
W
°C
°C
°C
-55 to +150
-55 to +150
260
相關PDF資料 |
PDF描述 |
|---|---|
| TIPP31C | NPN SILICON POWER TRANSISTORS |
| TIPP32C | PNP SILICON POWER TRANSISTORS |
| TIPP32 | PNP SILICON POWER TRANSISTORS |
| TIPP32A | PNP SILICON POWER TRANSISTORS |
| TIPP32B | PNP SILICON POWER TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIPP31B-S | 功能描述:兩極晶體管 - BJT 80V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPP31C | 制造商:Bourns Inc 功能描述:TRANSISTOR NPN TO-92 |
| TIPP31C | 制造商:Bourns Inc 功能描述:TRANSISTOR NPN TO-92 |
| TIPP31C-S | 功能描述:兩極晶體管 - BJT 100V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPP31-S | 功能描述:兩極晶體管 - BJT 40V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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