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參數資料
| 型號： | TISP3082F3 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | IC, CLOCK PLL, DTV |
| 中文描述： | 雙對稱瞬態電壓抑制器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 123K |
| 代理商： | TISP3082F3 |
TISP3082
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Copyright 1997, Power Innovations Limited, UK
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
G
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
G
Planar Passivated Junctions
Low Off-State Current
< 10 μA
G
Rated for International Surge Wave Shapes
G
UL Recognized, E132482
description
The TISP3082 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of two bidirectional
suppressor elements connected to a Common
(C) terminal. These devices will supress voltage
transients between terminals A and C, B and C,
and A and B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
DEVICE
V
(Z)
V
58
V
(BO)
V
82
‘3082
WAVE SHAPE
STANDARD
I
TSP
A
150
60
45
38
50
50
50
40
8/20 μs
10/160 μs
10/560 μs
0.2/310 μs
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
10/700 μs
10/1000 μs
These
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
monolithic
protection
devices
are
device symbol
TO-220 PACKAGE
(TOP VIEW)
A(T)
C(G)
B(R)
Pin 2 is in electrical contact with the mounting base.
MDXXANA
1
2
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP3082F3DR | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3082F3DR-S | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3082F3P | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3082F3PS | 制造商:Bourns Inc 功能描述: |
| TISP3082F3P-S | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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