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參數資料
| 型號： | TISP4500H3BJR |
| 廠商： | BOURNS INC |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 500 V, 55 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | PLASTIC, SMBJ, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 206K |
| 代理商： | TISP4500H3BJR |
APRIL 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
TISP4500H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
Non-Conductive During K.20/21/45 Power Contact Test
- Off-State Voltage ................................................... >245 V rms
- For Controlled Environment ...............................0
°
C to 70
°
C
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
How To Order
SMBJ Package (Top View)
Description
This device is designed to limit overvoltages on the telephone line to
±
500 V over the temperature range. The minimum off-state voltage of
±
350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives
protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations
K.20/21/45 230 V rms power cross test condition (test number 2.3.1).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
Device
V
DRM
V @ 0
°
C
350
V
(BO)
V @ 70
°
C
500
TISP4500H3BJ
.............................................. UL Recognized Component
Wave Shape
Standard
I
PPSM
A
2/10
GR-1089-CORE
500
10/250
GR-1089-CORE
230
10/700
ITU-T K.20/21/45
200
10/1000
GR-1089-CORE
100
T
R
MD-SMB-004-a
2
1
T
R
SD-TISP4xxx-001-a
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device
Package
Carrier
TISP4500H3BJ
SMB (DO-214AA)
Embossed Tape Reeled
TISP4500H3BJR
TISP4500H3BJR-S
Marking
Code
4500H3
Std. Qty.
3000
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
*RHAVALABE
VRSONS
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| TISP4600F3LMFR | HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP4500H3BJR-S | 功能描述:硅對稱二端開關元件 PROTECTOR - SINGLE BIDIRECTIONAL RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4520H3BJR-S | 制造商:Bourns Inc 功能描述:THYRISTOR TISP 520V 600MA TR - Tape and Reel |
| TISP4600F3LM | 功能描述:硅對稱二端開關元件 RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4600F3LMFR | 功能描述:硅對稱二端開關元件 RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4600F3LMFRS | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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