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參數資料
| 型號： | TISP5070H3BJ |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 前瞻性導電單向晶閘管過電壓保護器 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 299K |
| 代理商： | TISP5070H3BJ |
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JANUARY 1998 - REVISED MARCH 1999
Copyright 1999, Power Innovations Limited, UK
TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS
G
Analogue Line Card and ISDN Protection
- Analogue SLIC
- ISDN U Interface
- ISDN Power Supply
G
8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating
G
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
G
Rated for International Surge Wave Shapes
DEVICE
V
DRM
MINIMUM
V
-58
-65
-80
-120
V
(BO)
MAXIMUM
V
-70
-80
-110
-150
‘5070
‘5080
‘5110
‘5150
WAVE SHAPE
STANDARD
I
TSP
A
500
300
250
200
160
100
2/10 μs
8/20 μs
10/160 μs
10/700 μs
10/560 μs
10/1000 μs
GR-1089-CORE
ANSI C62.41
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
description
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally
caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the
telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN
power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide
protection for single supply analogue SLICs. A combination of three devices will give a low capacitance
protector network for the 3-point protection of ISDN lines.
The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative
overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which
causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current
resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of
the anti-parallel diode.
This TISP5xxxH3BJ range consists of four voltage variants to meet various maximum system voltage levels
(58 V to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA
with J-bend leads) and supplied in embossed carrier reel pack.
device symbol
SD5XAB
2
1
1
2
SMBJ PACKAGE
(TOP VIEW)
MDXXBGB
相關PDF資料 |
PDF描述 |
|---|---|
| TISP5110H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5150H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5080H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP61060D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61060DR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP5070H3BJR | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5070H3BJR-S | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5080H3BJ | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5080H3BJR | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5080H3BJR-S | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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