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參數(shù)資料
| 型號： | TISP61089AS |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠期導(dǎo)電的P -可編程門晶閘管過壓保護 |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 425K |
| 代理商： | TISP61089AS |
TISP61089
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
NOVEMBER 1995 - REVISED FEBRUARY 1998
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Copyright 1998, Power Innovations Limited, UK
PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION FOR LSSGR ‘1089
G
Dual Voltage-Programmable Protectors
- Wide 0 to -85 V Programming Range
- Low 5 mA max. Gate Triggering Current
- High 150 mA min. Holding Current
G
Rated for LSSGR ‘1089 Conditions
G
2/10 Protection Voltage Specified
G
Also Rated for ITU-T 10/700 impulses
G
Surface Mount and Through-Hole Options
- TISP61089P for Plastic DIP
- TISP61089D for Small-Outline
- TISP61089DR for Small-Outline Taped and
Reeled
description
The TISP61089 is a dual forward-conducting
buffered p-gate overvoltage protector. It is
designed to protect monolithic SLICs (Subscriber
Line Interface Circuits) against overvoltages on
the telephone line caused by lightning, a.c.
power contact and induction. The TISP61089 limits voltages that exceed the SLIC supply rail voltage. The
TISP61089 parameters are specified to allow equipment compliance with Bellcore GR-1089-CORE, Issue 1.
WAVE SHAPE
‘1089 TEST CLAUSE
AND TEST #
4.5.8 Second-Level 1
4.5.7 First-Level 3
I
TSP
A
120
30
2/10 μs
10/1000 μs
60 Hz POWER
FAULT TIME
100 ms
1 s
5 s
300 s
900 s
‘1089 TEST CLAUSE
AND TEST #
4.5.13 Second-Level 2
4.5.13 Second-Level 2
4.5.13 Second-Level 2
4.5.13 Second-Level 1
4.5.13 Second-Level 1
I
TSM
A
11
4.5
2.4
0.95
0.93
ELEMENT
FIRST-LEVEL
V @ 56 A
6
SECOND-LEVEL
V @ 100 A
8
Diode
Crowbar
V
GG
= -48 V
-57
-60
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of
-10 V to -75 V. The protector gate is connected to this negative supply. This references the protection
(clipping) voltage to the negative supply voltage. As the protection voltage will then track the negative supply
voltage the overvoltage stress on the SLIC is minimised.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially
clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then
device symbol
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
V
GG,
applied to the G terminal.
SD6XAE
A
K1
G
K2
MD6XAN
D PACKAGE
(TOP VIEW)
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4
5
6
7
8
K1
A
A
K2
G
K1
K2
NC
(Tip)
(Ground)
(Ground)
(Ring)
(Gate)
(Tip)
(Ring)
MD6XAV
P PACKAGE
(TOP VIEW)
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4
5
6
7
8
K2
G
K1
NC
K1
A
A
K2
(Tip)
(Ground)
(Ground)
(Ring)
(Gate)
(Tip)
(Ring)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089ASD | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089ASDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089ASDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089ASDS | 制造商:Bourns Inc 功能描述: |
| TISP61089ASD-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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