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參數資料
型號: TISP61511DR
廠商: POWER INNOVATIONS LTD
元件分類: 保護電路
英文描述: DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述: TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
封裝: PLASTIC, SOP-8
文件頁數: 1/9頁
文件大小: 360K
代理商: TISP61511DR
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
TISP61511D
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
Device Symbol
Dual Voltage-Programmable Protectors.
– Wide 0 to -80 V Programming Range
– Low 5 mA max. Triggering Current
– High 150 mA min. Holding Current
Rated for International Surge Wave Shapes
D Package (Top View)
Description
The TISP61511D is a dual forward-conducting buffered p-gate over-
voltage protector. It is designed to protect monolithic Subscriber Line
Interface Circuits, SLICs, against overvoltages on the telephone line
caused by lightning, ac power contact and induction. The TISP61511D
limits voltages that exceed the SLIC supply rail voltage.
The SLIC line driver section is typically powered from 0 V (ground)
and a negative voltage in the region of -10 V to -70 V. The protector
gate is connected to this negative supply. This references the
protection (clipping) voltage to the negative supply voltage. As the
protection voltage will track the negative supply voltage the overvoltage
stress on the SLIC is minimized.
Voltage Wave
Shape
Standard
I
TSP
A
2/10
μ
s
1.2/50
μ
s
0.5/700
μ
s
10/700
μ
s
10/1000
μ
s
TR-NWT-001089
ETS 300 047-1
RLM88/I3124
K17, K20, K21
TR-NWT-001089
170
90
40
40
30
Functional Replacements for
.............................................. UL Recognized Component
MD6XANB
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4
5
6
7
8
K1
A
A
K2
G
K1
K2
NC
(Tip)
(Ground)
(Ground)
(Ring)
(Gate)
(Tip)
(Ring)
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the
voltage, V
GG,
applied to the G terminal.
SD6XAE
A
K1
G
K2
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative
supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As
the current subsides the high holding current of the crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by
power cross and induction.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
De v c e T p e
Package
Type
LCP1511,
LCP1511D
A T T L7591AS
M G SS 150- 1
8-pin
Small-
Outline
TISP61511D
or TISP61511DR
for Taped and
Reeled
TISP61511D-S
or TISP61511DR-S
for Taped and
Reeled
Functional
Replacement
With Standard
Termination Finish
Order As
Functional
Replacement
With Lead Free
Termination Finish
Order As
*RHAVALABE
VRSONS
相關PDF資料
PDF描述
TISP61511DR-S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61511D-S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP6151X DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61521 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61521D DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
相關代理商/技術參數
參數描述
TISP61511DR-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61511DS 制造商:Bourns Inc 功能描述:
TISP61511D-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61512P 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61512PS 制造商:Bourns Inc 功能描述:
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