- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382590 > TISP9110LDMR-S (BOURNS INC) INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION PDF資料下載
參數(shù)資料
| 型號： | TISP9110LDMR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護電路 |
| 英文描述： | INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | 0.210 INCH, ROHS COMPLIANT, SOIC-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 194K |
| 代理商： | TISP9110LDMR-S |
AUGUST 2004 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP9110LDM Overvoltage Protector
TISP9110LDM
INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
Device Symbol
High Performance Protection for SLICs with +ve and -ve
Battery Supplies
– Wide -110 V to +110 V Programming Range
– Low 5 mA max. Gate Triggering Current
– Dynamic Protection Performance Specified for
International Surge Waveshapes
Applications include:
– Wireless Local Loop
– Access Equipment
– Regenerated POTS
– VOIP Applications
Rated for International Surge Wave Shapes
How To Order
8-SOIC (210 mil) Package (Top View)
Description
The TISP9110LDM is a programmable overvoltage protection
device designed to protect modern dual polarity supply rail
ringing SLICs (Subscriber Line Interface Circuits) against
overvoltages on the telephone line. Overvoltages can be caused
by lightning, a.c. power contact and induction. Four separate
protection structures are used; two positive and two negative to
provide optimum protection during Metallic (Differential) and
Longitudinal (Common Mode) protection conditions in both
polarities. Dynamic protection performance is specified under
typical international surge waveforms from Telcordia GR-1089-
CORE, ITU-T K.44 and YD/T 950.
The TISP9110LDM is programmed by connecting the G1 and G2
gate terminals to the negative (-V
(BAT)
) and positive (+V
(BAT)
)
SLIC Battery supplies respectively. This creates a protector operating at typically +1.4 V above +V
(BAT)
and -1.4 V below -V
(BAT)
under a.c.
power induction and power contact conditions. The protector gate circuitry incorporates 4 separate buffer transistors designed to provide
independent control for each protection element. The gate buffer transistors minimize supply regulation issues by reducing the gate current
drawn to around 5 mA, while the high voltage base emitter structures eliminate the need for expensive reverse bias protection gate diodes.
Wave Shape
Standard
I
PPSM
A
100
45
30
2/10
10/700
10/1000
GR-1089-CORE
ITU-T K.20/21/45
GR-1089-CORE
MD-8SOIC(210)-003-a
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4
5
6
7
8
NC
Ground
Ground
NC
(-V
(BAT)
) G1
(Tip or Ring) Line
(Ring or Tip) Line
(+V
(BAT)
) G2
SD-TISP9-001-a
G2
G1
Ground
Line
Line
The TISP9110LDM is rated for common surges contained in regulatory requirements such as ITU-T K.20, K.45, Telcordia GR-1089-CORE,
YD/T 950. By the use of appropriate overcurrent protection devices such as the Bourns
Multifuse
and Telefuse
devices, circuits can be
designed to comply with modern telecom standards.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
............................................... UL Recognized Component
Device
TISP9110LDM
Package
8-SOIC (210 mil)
Carrier
Marking Code
9110L
Standard Quantity
2000
Embossed Tape Reeled
TISP9110LDMR-S
For Lead Free
Termination Finish
Order As
*RHSCOMPIAN
相關PDF資料 |
PDF描述 |
|---|---|
| TK07H90A | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| TL-SCSI285 | "Single Output LDO |
| TL-SCSI285PW | FIXED-VOLTAGE REGULATORS FOR SCSI ACTIVE TERMINATION |
| TL-SCSI285Y | FIXED-VOLTAGE REGULATORS FOR SCSI ACTIVE TERMINATION |
| TL031AMD | ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TISP9110LDMS | 功能描述:SCR OverVolt Protector RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP9110MDMR-S | 制造商:Bourns Inc 功能描述: 制造商:Bourns Inc 功能描述:SURGE PROT THYRIST NEG/POS SLIC 制造商:Bourns Inc 功能描述:SCRs Dual Polarity SLIC 150/80/50A |
| TISPA79R241DR | 功能描述:硅對稱二端開關元件 RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISPA79R241DR-S | 功能描述:硅對稱二端開關元件 RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISPL758LF3DR | 功能描述:硅對稱二端開關元件 RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
發(fā)布緊急采購，3分鐘左右您將得到回復。