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參數資料
| 型號： | TLC2202AMD |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS |
| 中文描述： | 高級LinCMOSE低噪聲高精度運算放大器 |
| 文件頁數： | 1/62頁 |
| 文件大小： | 969K |
| 代理商： | TLC2202AMD |
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TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOS
LOW-NOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS175 – FEBRUARY 1997
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
B Grade Is 100% Tested for Noise
30 nV/
√
Hz Max at f = 10 Hz
12 nV/
√
Hz Max at f = 1 kHz
Low Input Offset Voltage . . . 500
μ
V Max
Excellent Offset Voltage Stability
With Temperature . . . 0.5
μ
V/
°
C Typ
Rail-to-Rail Output Swing
Low Input Bias Current
1 pA Typ at T
A
= 25
°
C
Common-Mode Input Voltage Range
Includes the Negative Rail
Fully Specified For Both Single-Supply and
Split-Supply Operation
description
The TLC220x, TLC220xA, TLC220xB, and
TLC220xY are precision, low-noise operational
amplifiers using Texas Instruments Advanced
LinCMOS
process. These devices combine the
noise performance of the lowest-noise JFET
amplifiers with the dc precision available
previously only in bipolar amplifiers. The
Advanced LinCMOS
process uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable using metal-gate technology. In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered by top-gate JFET and expensive
dielectric-isolated devices.
The combination of excellent dc and noise
performance with a common-mode input voltage
range that includes the negative rail makes these
devices an ideal choice for high-impedance,
low-level signal-conditioning applications in either
single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure
to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0
°
C to 70
°
C. The I-suffix devices are characterized
for operation from –40
°
C to 85
°
C. The M-suffix devices are characterized for operation over the full military
temperature range of –55
°
C to 125
°
C.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright
1997, Texas Instruments Incorporated
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
10
100
V
f – Frequency – Hz
TYPICAL EQUIVALENT
INPUT NOISE VOLTAGE
vs
FREQUENCY
60
1 k
10 k
50
40
30
20
10
0
VDD = 5 V
RS = 20
TA = 25
°
C
H
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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