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參數資料
型號: TLE202XY
廠商: Texas Instruments, Inc.
英文描述: EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS
中文描述: 神劍高速低功耗精密運算放大器
文件頁數: 1/66頁
文件大小: 1102K
代理商: TLE202XY
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191 – FEBRUARY 1997
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Supply Current . . . 230
μ
A Max
High Unity-Gain Bandwidth . . . 2 MHz Typ
High Slew Rate . . . 0.45 V/
μ
s Min
Supply-Current Change Over Military Temp
Range . . . 10
μ
A Typ at V
CC
±
=
±
15 V
Specified for Both 5-V Single-Supply and
±
15-V Operation
Phase-Reversal Protection
High Open-Loop Gain . . . 6.5 V/
μ
V
(136 dB) Typ
Low Offset Voltage . . . 100
μ
V Max
Offset Voltage Drift With Time
0.005
μ
V/mo Typ
Low Input Bias Current . . . 50 nA Max
Low Noise Voltage . . . 19 nV/
Hz Typ
description
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with
highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic
improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both
time and temperature. This means that a precision device remains a precision device even with changes in
temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply
rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems
applications.
The C-suffix devices are characterized for operation from 0
°
C to 70
°
C. The I-suffix devices are characterized
for operation from –40
°
C to 85
°
C. The M-suffix devices are characterized for operation over the full military
temperature range of –55
°
C to 125
°
C.
Copyright
1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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