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參數資料
型號: TLE6387GV60
廠商: INFINEON TECHNOLOGIES AG
元件分類: 穩壓器
英文描述: 1 A SWITCHING CONTROLLER, 430 kHz SWITCHING FREQ-MAX, PDSO14
封裝: PLASTIC, DSO-14
文件頁數: 14/24頁
文件大小: 264K
代理商: TLE6387GV60
TLE 6387 G
Target Datasheet Rev. 0.5
21
2001-08-27
5.2
Component recommendation and PCB layout
In order to largely avoid electromagnetic interference pin 2 (V
S), VIN and the drain of the
driven MOSFet should be directly connected to C
IN1. In a similar manner pin 14 (SRC),
the source of the transistor, the bootstrap capacitor C
BT and the inductance L should be
connected to the cathode of the freewheeling diode via a conducting area/surface on the
PCB to avoid parasitric effects when being connected only through the conducting paths.
Pin 9 (FB), R
RST1, RRST2, the other terminal of L and the driven load RLOAD should be
directly connected to C
OUT and the GND-terminals of CIN1, CIN2 TLE 6387 and the
freewheeling diode should be star-connected to the GND terminal of C
OUT.
The line connecting pin 1 (GDRV) and the gate of the driven transistor as well as the
wires connecting C
BT should be as short as possible. CIN1 should be placed as close as
possible to the drain of the MOSFet and the path connecting pin 2 (V
S) and CIN1 should
be as short as possible.
In order to enhance cooling of the TLE 6387 which may be necessary when operating at
high ambient temperatures, any of its GND pins should be connected to a heatsink area.
Component
Supplier
Type
Remarks
L1
EPCOS
B82464-A4473-M
47H,
Coilcraft
DO3316P-473
47H, 1.6A, 140m
DO5022P-473
47H, 4.5A, 86m
DO3340P-473
47H, 3.8A, 110m
M1
Infineon
BSP296
RDSon=0.8
, 1.0A
D1
Motorola
MBRD360
Schottky, 60V, 3A
C
IN1
various
Electrolyte or low
ESR tantalum
> 10F, 63V
C
IN2
EPCOS
B37872-K1104-K62
Ceramic X7R, 100nF, 100V
TDK
C3216X7R2A104M
Ceramic X7R, 100nF, 100V
C
BT
EPCOS
B37941-K0103-K60
Ceramic X7R, 10nF, 25V
TDK
CKCL44X7R1E103M Ceramic X7R, 10nF, 25V
C
OUT
EPCOS
B45194-E3107-+40*
Low ESR tantalum, 100F, 16V
EPCOS
B45194-E3476-+40*
Low ESR tantalum, 47F, 16V
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