
TLN226(F)
2007-10-01
1
TOSHIBA Infrared LED GaA
As Infrared Emitter
TLN226(F)
Lead(Pb)-Free
For Space
optical
transmission
High radiant power: Po = 18mW(typ.) at I
F
= 50mA
Wide half
angle value:
θ
1/2 = ±13°(typ.)
high-speed response: t
r
,t
f
= 30ns(typ.)
Light source for remote control
Designed for transmission of wireless AV signals purpose.
Designed for high
speed data transmission
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
F
100
mA
Pulse forward current
I
FP
1000(Note1)
mA
Power dissipation
P
D
220
mW
Reverse voltage
V
R
4
V
Operating temperature
T
opr
25~85
°C
Storage temperature
T
stg
30~100
°C
Soldering temperature (5s)
T
sol
260
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Frequency = 100kHz, duty = 1%
Optical And Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 100mA
1.8
2.2
V
Reverse current
I
R
V
R
= 4V
60
μ
A
Radiant power
P
O
I
F
= 50mA
14
18
mW
Radiant intensity
I
E
I
F
= 50mA
60
mW / sr
Rise time, fall time
t
r
, t
f
I
FP
= 100mA, P
W
= 100ns
30
ns
Cut
off frequency
(Note 2)
f
c
I
F
= 50mA
DC
+ 5mA
p-p
10
15
MHz
Capacitance
C
T
V
R
= 0, f = 1MHz
110
P
F
Peak emission wavelength
λ
P
I
F
= 50mA
830
870
900
nm
Spectral line half width
Δλ
1
I
F
= 50mA
50
nm
Half value angle
θ
2
I
F
= 50mA
±13
°
Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz.
Unit: mm
TOSHIBA
4
5M1A
Pin Connection
1
1.
Anode
2.
Cathode
2