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參數資料
| 型號： | TLP591B |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Photocoupler GaALAs Ired & Photo−Diode Array |
| 文件頁數： | 1/4頁 |
| 文件大小： | 153K |
| 代理商： | TLP591B |
TLP591B
2002-09-25
1
TOSHIBA Photocoupler GaA
As Ired & Photo
Diode Array
TLP591B
Telecommunication
Programmable Controllers
MOS Gate Driver
MOS FET Gate Driver
The TOSHIBA TLP59
1
B consists of an aluminum galium arsenide
infrared emitting diode optically coupled to a series connected
photo
diode array in a six lead plastic DIP package.
TLP59
1
B is suitable for MOS FET gate driver.
TLP59
1
B has an internal shunt resistor to optimize switching speed.
UL recognized: UL
1
577, file no. E67349
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
F
50
mA
Forward current derating
(Ta
≥
25°C)
I
F
/°C
0.5
mA /°C
Pulse forward current
(100μs pulse, 100pps)
I
FP
1
A
Reverse voltage
V
R
3
V
L
Junction temperature
T
j
125
°C
Forward current
I
FD
50
μA
Reverse voltage
V
RD
10
V
D
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Operating temperature range
T
opr
40~85
°C
Lead soldering temperature (10 sec.)
T
sol
260
°C
Isolation voltage
(AC, 1 min., R.H.
≤
60%)
(Note 1)
BV
S
2500
V
rms
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3
shorted together, and pins 4 and 6 shorted together.
Pin Configuration
(top view)
1. : Anode
2. : Cathode
3. : NC
4. : Cathode
6. : Anode
1
2
4
6
3
Unit in mm
TOSHIBA
11
7A9
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