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參數資料
型號: TLV2354MFK
廠商: Texas Instruments, Inc.
英文描述: LinCMOSE QUADRUPLE LOW-VOLTAGE DIFFERENTIAL COMPARATORS
中文描述: LinCMOSE翻兩番低壓差分比較器
文件頁數: 1/20頁
文件大小: 300K
代理商: TLV2354MFK
TLV2354, TLV2354Y
LinCMOS
QUADRUPLE LOW-VOLTAGE DIFFERENTIAL COMPARATORS
SLCS012B – MAY 1992 – REVISED MARCH 1999
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Wide Range of Supply Voltages
2 V to 8 V
Fully Characterized at 3 V and 5 V
Very-Low Supply-Current Drain
240
μ
A Typ at 3 V
Common-Mode Input Voltage Range
Includes Ground
High Input Impedance . . . 10
12
Typ
Fast Response Time . . . 200 ns Typ for
TTL-Level Input Step
Extremely Low Input Bias Current
5 pA Typ
Output Compatible With TTL, MOS, and
CMOS
Built-In ESD Protection
description
The TLV2354 consists of four independent,
low-power comparators specifically designed for
single power-supply applications and operateS
with power-supply rails as low as 2 V. When
powered from a 3-V supply, the typical supply
current is only 240
μ
A.
The TLV2354 is designed using the Texas Instruments LinCMOS
technology and, therefore, features an
extremely high input impedance (typically greater than 10
12
), which allows direct interfacing with
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic
wired-AND relationships. The TLV2354I is fully characterized for operation from – 40
°
C to 85
°
C. The TLV2354M
is fully characterized for operation from – 55
°
C to 125
°
C.
The TLV2354 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a
1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device
as exposure to ESD may result in degradation of the device parametric performance.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
FORM
(Y)
TA
VIOmax
at 25
°
C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
PLASTIC
DIP
(N)
TSSOP
(PW)
CERAMIC
FLATPACK
(W)
–40
°
C to
85
°
C
5 mV
TLV2354ID
TLV2354IN
TLV2354IPWLE
TLV2354Y
–55
°
C to
125
°
C
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLV2352IDR).
The PW packages are only available left-ended taped and reeled (e.g., TLV2354IPWLE).
5 mV
TLV2354MFK
TLV2354MJ
TLV2354MW
These devices have limited built-in protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
1999, Texas Instruments Incorporated
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LINCMOS is a trademark of Texas Instruments Incorporated.
OUT
symbol (each comparator)
IN+
IN–
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