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參數資料
| 型號： | TM124BBJ32F-80 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 32-BIT DYNAMIC RAM MODULE |
| 中文描述： | 32位動態RAM模塊 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 143K |
| 代理商： | TM124BBJ32F-80 |
TM124BBJ32F, TM124BBJ32U 1048576 BY 32-BIT DYNAMIC RAMMODULE
TM248CBJ32F, TM248CBJ32U 2097152 BY 32-BIT DYNAMIC RAMMODULE
SMMS661 – JANUARY 1996
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization
TM124BBJ32F . . . 1 048 576
×
32
TM248CBJ32F . . . 2 097 152
×
32
Single 5-V Power Supply (
±
10% Tolerance)
72-Pin Single In-Line Memory Module
(SIMM) for Use With Socket
TM124BBJ32F – Utilizes Two 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
TM248CBJ32F – Utilizes Four 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
Long Refresh Period
16 ms (1024 Cycles)
All Inputs, Outputs, Clocks Fully
TTL-Compatible
3-State Output
Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
Enhanced Page-Mode Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
Presence Detect
Performance Ranges:
ACCESS
TIME
tRAC
ACCESS ACCESS READ
TIME
TIME
tAA
tCAC
OR
WRITE
CYCLE
(MIN)
110 ns
130 ns
150 ns
110 ns
130 ns
150 ns
(MAX)
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
(MAX)
30 ns
35 ns
40 ns
30 ns
35 ns
40 ns
(MAX)
15 ns
18 ns
20 ns
15 ns
18 ns
20 ns
’124BBJ32F-60
’124BBJ32F-70
’124BBJ32F-80
’248CBJ32F-60
’248CBJ32F-70
’248CBJ32F-80
Low Power Dissipation
Operating Free-Air Temperature Range
0
°
C to 70
°
C
Gold-Tabbed Versions Available:
TM124BBJ32F
TM248CBJ32F
Tin-Lead (Solder) Tabbed Versions
Available:
TM124BBJ32U
TM248CBJ32U
description
TM124BBJ32F
The TM124BBJ32F is a 4-MByte dynamic random-access memory (DRAM) organized as four times
1048576
×
8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ, 1 048 576
×
16-bit DRAMs, each
in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ is
described in the TMS418160 data sheet. The TM124BBJ32F SIMM is available in the single-sided BJ-leadless
module for use with sockets.
TM248CBJ32F
The TM248CBJ32F is an 8-MByte DRAM organized as four times 2 097 152
×
8 in a 72-pin SIMM. The SIMM
is composed of four TMS418160DZ, 1048576
×
16-bit DRAMs, each in a 42-lead plastic SOJ package mounted
on a substrate with decoupling capacitors. The TMS418160DZ is described in the TMS418160 data sheet. The
TM248CBJ32F SIMM is available in the double-sided BJ-leadless module for use with sockets.
operation
The TM124BBJ32F operates as two TMS418160DZs connected as shown in the functional block diagram and
Table 1. The TM248CBJ32F operates as four TMS418160DZs connected as shown in the functional block
diagram and Table 1. The common I/O feature dictates the use of early-write cycles to prevent contention on
D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1996, Texas Instruments Incorporated
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| TM124BBJ32U | 制造商:TI 制造商全稱:Texas Instruments 功能描述:32-BIT DYNAMIC RAM MODULE |
| TM124BBJ32U-60 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:32-BIT DYNAMIC RAM MODULE |
| TM124BBJ32U-70 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:32-BIT DYNAMIC RAM MODULE |
| TM124BBJ32U-80 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:32-BIT DYNAMIC RAM MODULE |
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