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參數(shù)資料
| 型號(hào)： | TM1262B-R |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | TO-3PF 12A Triac |
| 中文描述： | 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 50K |
| 代理商： | TM1262B-R |
I
Absolute Maximum Ratings
Parameter
I
Electrical Characteristics
Symbol
V
DRM
I
T(RMS)
I
TSM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
Ratings
600
12
120
2
5
0.5
–40 to
+
125
Unit
V
A
A
A
W
W
°
C
°
C
Vrms
Conditions
Conduction angle 360
°
, Tc=98
°
C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125
°
C
f 50Hz, duty 10%
f 50Hz, duty 10%
R
GK
=
∞
, Tj=–40
°
C to +125
°
C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
–40 to
+
125
2000
V
T
2
+
, G
+
T
2
+
, G
–
T
2
T
2
T
2
+
, G
+
T
2
+
, G
–
T
2
T
2
–
, G
–
–
, G
+
–
, G
–
–
, G
+
V
mA
V
mA
°
C/W
Parameter
Symbol
Ratings
typ
0.3
min
max
2.0
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.6
0.7
2.1
5.0
4.5
5.0
25
6
1.1
1.2
8.0
8.0
8.0
2.0
0.1
2.0
2.0
2.0
0.4
0.4
0.8
1.6
1.8
1.2
0.1
V
D
=V
DRM
, R
GK
=
∞
, Tj=125
°
C
V
D
=V
DRM
, R
GK
=
∞
, Tj=25
°
C
I
TM
=16A, T
C
=25
°
C
V
D
=20V, R
L
=40
, T
C
=25
°
C
V
D
=20V, R
L
=40
, T
C
=25
°
C
Junction to case
Tj
=
25
°
C
V
D
=
1/2
×
V
DRM
, Tj
=
125
°
C
60
TM1262B-R
TO-3PF 12A Triac
I
Features
G
Repetitive peak off-state voltage: V
DRM
=600V
G
RMS on-state current: I
T(RMS)
=12A
G
Gate trigger current: I
GT
=8mA max (MODE , , )
G
Isolation voltage: V
ISO
=2000V(AC, 1min.)
G
For resistive load
G
UL approved type available
15.6
±
0.2
1.5 4.4 1.5
5.45
±
0.1
3.35
±
0.2
3.45
±
0.2
5.5
±
0.2
3.2
±
0.2
2
±
0
3
1
5
±
0
9
±
0
2.15
(
5.45
±
0.1
–
0.1
+
0.2
1.05–
0.1
+
0.2
0.65–
0.1
+
0.2
1.75–
0.1
+
0.2
External Dimensions
(Unit: mm)
Weight: Approx. 6.5g
(1) (2) (3)
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate(G)
a. Part Number
b. Lot Number
a
b
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
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