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參數(shù)資料
| 型號(hào)： | TM1661P-LL |
| 廠商： | Sanken Electric Co.,Ltd. |
| 英文描述： | TO-3P 16A Triac |
| 中文描述： | 以TO - 3P 16A條雙向晶閘管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 48K |
| 代理商： | TM1661P-LL |
15.6
±
0.2
1.5 4.4 1.5
5.45
±
0.1
3.35
±
0.2
3.45
±
0.2
5.5
±
0.2
3.2
±
0.2
2
±
0
3
1
5
±
0
9
±
0
2.15
(
5.45
±
0.1
–
0.1
+
0.2
1.05–
0.1
+
0.2
0.65–
0.1
+
0.2
1.75–
0.1
+
0.2
I
Absolute Maximum Ratings
I
Electrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
A
A
V
A
W
W
°
C
°
C
Conduction angle 360
°
, Tc=92.5
°
C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125
°
C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
400
TM1641B-L
600
TM1661B-L
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
16
160
10
2
5
0.5
–40 to
+
125
2000
–40 to
+
125
Vrms
V
T
2
+
, G
+
T
2
+
, G
–
T
2
T
2
T
2
+
, G
+
T
2
+
, G
–
T
2
T
2
–
, G
–
–
, G
+
–
, G
–
–
, G
+
V
mA
V
mA
V/
μ
s
°
C
/W
Parameter
Symbol
Ratings
typ
0.1
min
max
2.0
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
(dv/dt)c
Rth
0.7
0.8
1.0
12
16
25
70
25
0.8
1.5
30
30
30
1.8
0.2
10
1.6
1.5
1.5
0.1
V
D
=
V
DRM
, R
GK
=
∞
, Tj
=
125
°
C
V
D
=
V
DRM
, R
GK
=
∞
, Tj
=
25
°
C
I
TM
=
20A, T
C
=
25
°
C
V
D
=
6V, R
L
=
10
, T
C
=
25
°
C
V
D
=
6V, R
L
=
10
, T
C
=
25
°
C
Junction to case
Tj
=
25
°
C
V
D
=
400V, Tj
=
125
°
C
V
D
=
1/2
×
V
DRM
, Tj
=
125
°
C
48
TM1641B-L,TM1661B-L
TO-3PF 16A Triac
I
Features
G
Repetitive peak off-state voltage: V
DRM
=400, 600V
G
RMS on-state current: I
T(RMS)
=16A
G
Gate trigger current: I
GT
=30mA max (MODE , , )
G
Rate-of-rise of off-state commutation voltage
: (dv/dt)c=10V/
μ
s min.
G
Isolation voltage: V
ISO
=2000V(AC, 1min.)
G
UL approved type available
External Dimensions
(Unit: mm)
Weight: Approx. 6.5g
(1) (2) (3)
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate(G)
a. Part Number
b. Lot Number
a
b
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Rate-of-rise of off-state commutation voltage
Thermal resistance
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