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參數資料
型號: TM248NBK36B-60
廠商: Texas Instruments, Inc.
英文描述: CAP 68PF 100V CERAMIC MONO 5%
中文描述: 動態隨機存儲器模塊
文件頁數: 1/11頁
文件大小: 156K
代理商: TM248NBK36B-60
TM124MBK36B, TM124MBK36R 1048576 BY 36-BIT
TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT
DYNAMIC RAMMODULE
SMMS137E – JANUARY 1991 – REVISEDJUNE 1995
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization
TM124MBK36B . . . 1 048 576
×
36
TM248NBK36B . . . 2 097 152
×
36
Single 5-V Power Supply (
±
10% Tolerance)
72-pin Leadless Single In-Line Memory
Module (SIMM) for Use With Sockets
TM124MBK36B–Utilizes Eight 4-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages and One 4-Megabit
Quad-CAS DRAM in a Plastic Small-Outline
J-Lead (SOJ) Package
TM248NBK36B–Utilizes Sixteen 4-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages and Two 4-Megabit
Quad-CAS DRAMs in Plastic Small-Outline
J-Lead (SOJ) Packages
Long Refresh Period
16 ms (1024 Cycles)
All Inputs, Outputs, Clocks Fully TTL
Compatible
3-State Output
Common CAS Control for Nine Common
Data-In and Data-Out Lines, in Four Blocks
Enhanced Page Mode Operation with
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
Presence Detect
Performance Ranges:
ACCESS
TIME
tRAC
ACCESS ACCESS READ
TIME
TIME
tAA
tCAC
OR
WRITE
CYCLE
(MIN)
110 ns
130 ns
150 ns
110 ns
130 ns
150 ns
(MAX)
(MAX)
30 ns
35 ns
40 ns
30 ns
35 ns
40 ns
(MAX)
15 ns
18 ns
20 ns
15 ns
18 ns
20 ns
’124MBK36B-60 60 ns
’124MBK36B-70 70 ns
’124MBK36B-80 80 ns
’248NBK36B-60
’248NBK36B-70
’248NBK36B-80
Low Power Dissipation
Operating Free-Air Temperature Range
0
°
C to 70
°
C
Gold-Tabbed Versions Available:
– TM124MBK36B
– TM248NBK36B
Tin-Lead (Solder) Tabbed Versions
Available:
– TM124MBK36R
– TM248NBK36R
60 ns
70 ns
80 ns
description
TM124MBK36B
The TM124MBK36B is a dynamic random-access memory (DRAM) organized as four times 1 048 576
×
9
(bit 9 is generally used for parity) in a 72-pin leadless single in-line memory module (SIMM). The SIMM is
composed of eight TMS44400DJ, 1 048 576
×
4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead
packages (SOJs), and one TMS44460DJ, 1 048 576
×
4-bit Quad-CAS DRAM in a 24/26-lead plastic
small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ
and TMS44460DJ is described in the TMS44400 or TMS44460 data sheet, respectively.
The TM124MBK36B is available in the single-sided BK leadless module for use with sockets.
The TM124MBK36B features RAS access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation
from 0
°
C to 70
°
C.
TM248NBK36B
The TM248NBK36B is a DRAM organized as four times 2 097 152
×
9 (bit 9 is generally used for parity) in a
72-pin leadless SIMM. The SIMM is composed of sixteen TMS44400DJ, 1 048 576
×
4-bit DRAMs, each in
20/26-lead plastic small-outline J-lead packages (SOJs), and two TMS44460DJ, 1 048 576
×
4-bit Quad-CAS
DRAMs, each in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with
decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 and TMS44460
data sheet, respectively.
Copyright
1995, Texas Instruments Incorporated
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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相關代理商/技術參數
參數描述
TM248NBK36B-70 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE
TM248NBK36B-80 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE
TM248NBK36E 制造商:TI 制造商全稱:Texas Instruments 功能描述:36-BIT DYNAMIC RAM MODULE
TM248NBK36R 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE
TM248NBK36R-80 制造商:Rochester Electronics LLC 功能描述:- Bulk
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