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參數資料
| 型號： | TM4EP72CPN-70 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| 中文描述： | 擴展數據輸出動態隨機存儲器模塊 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 354K |
| 代理商： | TM4EP72CPN-70 |
TM4EP64BJN, TM4EP64BPN, TM4EP64CJN, TM4EP64CPN 4194304 BY 64-BIT
TM4EP72BJN, TM4EP72BPN, TM4EP72CJN, TM4EP72CPN 4194304 BY 72-BIT
EXTENDED-DATA-OUT DYNAMIC RAMMODULES
SMMS682A – AUGUST 1997– REVISED MARCH 1998
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization
– TM4EP64xxN-xx . . . 4194304
×
64 Bits
– TM4EP72xxN-xx . . . 4194304
×
72 Bits
Single 3.3-V Power Supply
(
±
10% Tolerance)
JEDEC 168-Pin Dual-In-Line Memory
Module (DIMM) Without Buffer for Use With
Socket
TM4EP64xxN-xx — Utilizes Sixteen 16M-Bit
High-Speed (4M
×
4-Bit) Dynamic RAMs
TM4EP72xxN-xx — Utilizes Eighteen
16M-Bit High-Speed (4M
×
4-Bit) Dynamic
RAMs
High-Speed, Low-Noise LVTTL Interface
High-Reliability Plastic 24/26-Lead
300-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DJ Suffix) and
24/26-Lead 300-Mil-Wide Surface-Mount
Thin Small-Outline Package (TSOP)
(DGA Suffix)
Long Refresh Periods:
– TM4EPxxCxN: 64 ms (4096 Cycles)
– TM4EPxxBxN: 32 ms (2048 Cycles)
3-State Output
Extended-Data-Out (EDO) Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
Serial Presence-Detect (SPD) Using
EEPROM
Ambient Temperature Range
0
°
C to 70
°
C
Gold-Plated Contacts
Performance Ranges
ACCESS
TIME
tRAC
(MAX)
’4EPxxxxN-50
50 ns
’4EPxxxxN-60
60 ns
’4EPxxxxN-70
70 ns
ACCESS ACCESS
TIME
tCAC
(MAX)
13 ns
15 ns
18 ns
EDO
CYCLE
tHPC
(MIN)
20 ns
25 ns
30 ns
TIME
tAA
(MAX)
25 ns
30 ns
35 ns
description
The TM4EP64xxN is a 32M-byte, 168-pin, dual-in-line memory module (DIMM). The DIMM is composed of
sixteen TMS42x409A, 4194304
×
4-bit EDO dynamic random-access memories (DRAMs), each in a 300-mil,
26-pin plastic thin small-outline package (TSOP) (DGA suffix) mounted on a substrate with decoupling
capacitors. See the TMS42x409A data sheet (literature number SMKS893). The TM4EP64xJN is available with
an SOJ package (DJ suffix).
The TM4EP72xxN is a 32M-byte, 168-pin DIMM. The DIMM is composed of eighteen TMS42x409A,
4194304
×
4-bit EDO DRAMs, each in a 300-mil, 26-pin plastic TSOP (DGA suffix) mounted on a substrate with
decoupling capacitors. See the TMS42x409A data sheet (literature number SMKS893). The TM4EP72xJN is
available with an SOJ packaage (DJ suffix).
operation
The TM4EP64xxN operates as 16 TMS42x409As that are connected as shown in the TM4EP64xxN functional
block diagram. The TM4EP72xxN operates as 18 TMS42x409As that are connected as shown in the
TM4EP72xxN functional block diagram.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
相關PDF資料 |
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|---|---|
| TM4EP64BPN-50 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP64CPN-50 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP64BJN-50 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP64BJN-60 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP64BJN-70 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
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