- 您現在的位置：買賣IC網 > PDF目錄382617 > TMD1013-1-431 (Toshiba Corporation) MICROWAVE POWER MMIC AMPLIFIER PDF資料下載
參數資料
| 型號： | TMD1013-1-431 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER MMIC AMPLIFIER |
| 中文描述： | 微波功率MMIC放大器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 53K |
| 代理商： | TMD1013-1-431 |
MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR
TMD1013-1-431
TECHNICAL DATA
FEAT URES
n
HIGH POWER
n
BROAD BAND INTERNALLY MATCHED
P1dB=33.0dBm at 9.5GHz to 12.0GHz
n
HIGH GAIN
n
HERMETICALLY SEALED PACKAGE
G1dB=25.0dB at 9.5GHz to 12.0GHz
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DD
V
GG
P
in
T
f
T
stg
UNIT
RATING
Drain Supply Voltage
V
15
Gate Supply Voltage
Input Power
V
-10
15
dBm
°
C
°
C
Flange Temperature
Storage Temperature
-30
～
+80
-65
～
+175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
dBm
31.0
33.0
Power Gain at 1dB Gain
Compression Point
G
1dB
dB
21.0
25.0
Gain Flatness
Drain Current
Power Added Efficiency
3
rd
Order Intermodulation
Distortion
G
I
DD
h
add
dB
A
%
-42
1.4
14
±
2.5
1.8
V
DD
= 10V
V
GG
= -5V
f
= 9.5 – 12.0GHz
IM3
2 tone @
Po=19dBm(S.C.L.)
dBc
-45
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar. 2006
相關PDF資料 |
PDF描述 |
|---|---|
| TMM2063AP-10 | 65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY |
| TMM2063AP-12 | 65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY |
| TMM2063AP-70 | 65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY |
| TMP19A43CD | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
| TMP19A43CZXBG | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TMD107004-2011 | 制造商:ITT Interconnect Solutions 功能描述:TMD107004-2011 - Bulk |
| TMD1414-2C | 制造商:Toshiba America Electronic Components 功能描述:Power Amplifier 6-Pin 7-BA15A 制造商:Toshiba America Electronic Components 功能描述:KU-BAND MICROWAVE POWER MMIC AMPLIFIER 14.5 GHZ - Trays |
| TMD1925-3 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER MMIC AMPLIFIER |
| TMD1T3B1M1QE | 功能描述:Toggle Switch DPDT Panel Mount 制造商:te connectivity alcoswitch switches 系列:- 包裝:散裝 零件狀態:有效 電路:DPDT 開關功能:開-開 額定電流:3A（AC/DC） 額定電壓 - AC:120V 額定電壓 - DC:28V 致動器類型:標準圓形 致動器長度:7.37mm 照明:不發光 照明類型，顏色:- 照明電壓（標稱值）:- 安裝類型:面板安裝 端子類型:焊片 面板開口尺寸:圓形 - 4.95mm 直徑 襯套螺紋:10-48 侵入防護:IP67 - 防塵，防水 特性:工藝密封 致動器材料:- 電氣壽命:- 工作溫度:-30°C ~ 85°C 標準包裝:100 |
| TMD1T4B5M1QE | 功能描述:Toggle Switch DPDT Panel Mount 制造商:te connectivity alcoswitch switches 系列:- 包裝:散裝 零件狀態:有效 電路:DPDT 開關功能:開-開 額定電流:3A（AC/DC） 額定電壓 - AC:120V 額定電壓 - DC:28V 致動器類型:標準圓形 致動器長度:10.41mm 照明:不發光 照明類型，顏色:- 照明電壓（標稱值）:- 安裝類型:面板安裝 端子類型:焊片 面板開口尺寸:圓形 - 6.35mm 直徑 襯套螺紋:1/4-40 侵入防護:IP67 - 防塵，防水 特性:工藝密封 致動器材料:- 電氣壽命:- 工作溫度:-30°C ~ 85°C 標準包裝:100 |
發布緊急采購，3分鐘左右您將得到回復。