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參數資料
| 型號： | TMS27C512-150 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Programmable Read-Only Memory(64K×8結構,可擦可編程只讀存儲器) |
| 中文描述： | 可編程只讀存儲器（64K的× 8結構，可擦可編程只讀存儲器） |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 283K |
| 代理商： | TMS27C512-150 |
TMS27C512 524288-BIT UV ERSABLE PROGRAMMABLE
TMS27PC512 524288-BIT PROGRAMMABLE
READ-ONLY MEMORY
SMLS512F – NOVEMBER 1985 – REVISED JUNE 1995
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
This Data Sheet is Applicable to All
TMS27C512s and TMS27PC512s Symbolized
with Code “B” as Described on Page 182.
Organization . . . 64K
×
8
Single 5-V Power Supply
Pin Compatible With Existing 512K MOS
ROMs, PROMs, and EPROMs
All Inputs/Outputs Fully TTL Compatible
Max Access/Min Cycle Time
V
CC
±
10%
’27C/PC512-10
100 ns
’27C/PC512-12
120 ns
’27C/PC512-15
150 ns
’27C/PC512-20
200 ns
’27C/PC512-25
250 ns
Power Saving CMOS Technology
Very High-Speed SNAP! Pulse
Programming
3-State Output Buffers
400-mV Minimum DC Noise Immunity With
Standard TTL Loads
Latchup Immunity of 250 mA on All Input
and Output Lines
Low Power Dissipation ( V
CC
= 5.25 V )
– Active . . . 158 mW Worst Case
– Standby . . . 1.4 mW Worst Case
(CMOS Input Levels)
PEP4 Version Available With 168-Hour
Burn-In, and Choices of Operating
Temperature Ranges
512K EPROM Available With MIL-STD-883C
Class B High Reliability Processing
(SMJ27C512)
description
The TMS27C512 series are 524288-bit, ultra-
violet-light erasable, electrically programmable
read-only memories.
The TMS27PC512 series are 524288-bit, one-
time electrically programmable read-only memo-
ries.
3
2 1 32 31
14
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
4
30
15 16 17 18 19 20
PIN NOMENCLATURE
A0–A15
E
DQ0–DQ7
G/VPP
GND
NC
NU
VCC
Address Inputs
Chip Enable/Powerdown
Inputs (programming)/Outputs
13-V Programming Power Supply
Ground
No Internal Connection
Make No External Connection
5-V Power Supply
J AND N PACKAGES
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
V
CC
A14
A13
A8
A9
A11
G/V
PP
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
A8
A9
A11
NC
G/V
PP
A10
E
DQ7
DQ6
A6
A5
A4
A3
A2
A1
A0
NC
DQ0
D
D
N
D
D
A
A
A
N
C
A
A
FM PACKAGE
(TOP VIEW)
D
G
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1995, Texas Instruments Incorporated
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| TMS28F512A-15C4FML(中文) | Flash Electrically Erasable Programmable Read-Only Memory(64K×8結構,可擦可編程閃速只讀存儲器) |
| TMS29F040(中文) | Flash Electrically Erasable Programmable Read-Only Memory(512K×8結構,可擦可編程閃速只讀存儲器) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TMS27C512-150JE4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| TMS27C512-150JL | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8-BIT PROGRAMMABLE READ-ONLY MEMORIES |
| TMS27C512-150JL4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| TMS27C512-15JE | 制造商:TI 制造商全稱:Texas Instruments 功能描述:TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |
| TMS27C512-15JE4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
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