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參數資料
| 型號： | TMS28F010A-12C4DUQ4 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| 中文描述： | 1048576位閃存電可擦除可編程只讀存儲器 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 328K |
| 代理商： | TMS28F010A-12C4DUQ4 |
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
Copyright
1993, Texas Instruments Incorporated
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization . . . 128K
×
8-Bit Flash Memory
Pin Compatible With Existing 1-Megabit
EPROMs
V
CC
Tolerance
±
10%
All Inputs/Outputs TTL Compatible
Maximum Access/Minimum Cycle Time
’28F010A-10
’28F010A-12
’28F010A-15
’28F010A-17
Industry-Standard Programming Algorithm
PEP4 Version Available With 168-Hour
Burn-In and Choice of Operating
Temperature Ranges
Chip Erase Before Reprogramming
10000 and 1000 Program/Erase-Cycle
Versions Available
Low Power Dissipation (V
CC
= 5.5 V)
– Active Write . . . 55 mW
– Active Read . . . 165 mW
– Electrical Erase . . . 82.5 mW
– Standby . . . 0.55 mW
(CMOS-Input Levels)
Automotive Temperature Range
– 40
°
C to 125
°
C
100 ns
120 ns
150 ns
170 ns
description
The TMS28F010A is a 1048576-bit, program-
mable read-only memory that can be electrically
bulk-erased and reprogrammed. It is available in
10000 and 1000 program/erase-endurance-
cycle versions.
The TMS28F010A Flash EEPROM is offered in a
dual in-line plastic package (N suffix) designed for
insertion in mounting-hole rows on 15,2-mm
(600-mil) centers, a 32-lead plastic leaded
chip-carrier package using 1,25-mm (50-mil) lead
spacing (FM suffix), a 32-lead thin small-outline
package (DD suffix), and a reverse pinout TSOP
package (DU suffix).
The TMS28F010A is characterized for operation
in temperature ranges of 0
°
C to 70
°
C (NL, FML,
DDL, and DUL suffixes), –40
°
C to 85
°
C (NE, FME,
DDE, and DUE suffixes), and –40
°
C to 125
°
C
(NQ, FMQ, DDQ, and DUQ suffixes). All package
types are offered with 168-hour burn-in (4 suffix).
A0–A16
DQ0–DQ7
E
G
NC
VCC
VPP
VSS
W
Address Inputs
Data In/Data Out
Chip Enable
Output Enable
No Internal Connection
5-V Power Supply
12-V Power Supply
Ground
Write Enable
N PACKAGE
(TOP VIEW)
PIN NOMENCLATURE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
V
CC
W
NC
A14
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
3 2 1 32 31
14
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
G
A10
E
DQ7
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
4
30
15 16 17 18 19
D
D
D
D
D
A
A
A
P
W
N
FM PACKAGE
(TOP VIEW)
20
D
V
V
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
相關PDF資料 |
PDF描述 |
|---|---|
| TMS28F010A-12C4FME4 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:14S; Connecting Termination:Crimp; Circular Shell Style:Square Flange Receptacle; Body Style:Straight |
| TMS28F010A-12C4FML4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C4FMQ4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C4NE4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C4NL4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TMS28F010A-12C4FME4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C4FML | 制造商:Texas Instruments 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
| TMS28F010A-12C4FML4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C4FMQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-12C4FMQ4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
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