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參數(shù)資料
型號(hào)： TMS28F400BZB80BDBJE
廠商： Texas Instruments, Inc.
英文描述： 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
中文描述： 8-BIT/262144由16位啟動(dòng)塊閃存
文件頁(yè)數(shù)： 1/29頁(yè)
文件大?。?/td> 404K
代理商： TMS28F400BZB80BDBJE
TMS28F400BZT, TMS28F400BZB
524288 BY 8-BIT/262144 BY 16-BIT
BOOT-BLOCK FLASH MEMORIES
SMJS400E – JUNE 1994 – REVISED JANUARY 1998
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization . . .
524288 by 8 Bits
262144 by 16 Bits
Array-Blocking Architecture
– Two 8K-Byte Parameter Blocks
– One 96K-Byte Main Block
– Three 128K-Byte Main Blocks
– One 16K-Byte Protected Boot Block
– Top or Bottom Boot Locations
All Inputs/Outputs TTL Compatible
Maximum Access/Minimum Cycle Time
V
CC
±
10%
’28F400BZx80
80 ns
’28F400BZx90
90 ns
(x = top (T) or bottom (B) boot-block
configuration ordered)
10000 Program/Erase-Cycles
Two Temperature Ranges
– Commercial . . . 0
°
C to 70
°
C
– Extended . . . – 40
°
C to 85
°
C
Low Power Dissipation (V
CC
= 5.5 V)
– Active Write . . . 330 mW (Byte Write)
– Active Read . . . 330 mW (Byte Read)
– Active Write . . . 358 mW (Word Write)
– Active Read . . . 330 mW (Word Read)
– Block Erase . . . 165 mW
– Standby . . . 0.55 mW (CMOS-Input
Levels)
– Deep Power-Down Mode . . . 0.0066 mW
Fully Automated On-Chip Erase and
Word/Byte-Program Operations
Write Protection for Boot Block
Industry Standard Command State Machine
(CSM)
– Erase Suspend/Resume
– Algorithm-Selection Identifier
description
The TMS28F400BZx is a 524288 by 8-bit/262144 by 16-bit (4194304-bit), boot-block flash memory that can
be electrically block-erased and reprogrammed. The TMS28F400BZx is organized in a blocked architecture
consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and
three 128K-byte main blocks. The device can be ordered with either a top or bottom boot-block configuration.
Operation as a 512K-byte (8-bit) or a 256K-word (16-bit) organization is user-definable.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
23
V
CC
PIN NOMENCLATURE
A0–A17
BYTE
DQ0–DQ14
DQ15/A–1
Address Inputs
Byte Enable
Data In/Out
Data In/Out (word-wide mode),
Low-Order Address (byte-wide mode)
Chip Enable
Output Enable
No Internal Connection
Reset/Deep Power Down
5-V Power Supply
12-V Power Supply for
Program/Erase
Ground
Write Enable
E
G
NC
RP
VCC
VPP
VSS
W
DBJ PACKAGE
(TOP VIEW)
V
PP
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
V
SS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
V
SS
DQ15/A
–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1998, Texas Instruments Incorporated
相關(guān)PDF資料
PDF描述
TMS28F400BZB80BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT80BDBJE 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT90BDBJE 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT80BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT90BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
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