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參數資料
型號: TMS3473
廠商: Texas Instruments, Inc.
英文描述: PARALLEL DRIVER
中文描述: 并行驅動
文件頁數: 1/9頁
文件大小: 107K
代理商: TMS3473
TMS3473B
PARALLEL DRIVER
SOCS022B – NOVEMBER 1990
Copyright
1990, Texas Instruments Incorporated
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TTL-Compatible Inputs
CCD-Compatible Outputs
Variable-Output Slew Rates With External
Resistor Control
Full-Frame Operation
Frame-Transfer Operation
Solid-State Reliability
Adjustable Clock Levels
description
The TMS3473B is a monolithic CMOS integrated
circuit designed to drive the parallel image-area
gate (IAG), parallel storage-area gate (SAG), and
antiblooming gate (ABG) inputs of the Texas Instruments (TI
) virtual-phase CCD image sensors. The
TMS3473B interfaces the CCD image sensor to a user-defined timing generator; it receives TTL-input signals
from the timing generator and outputs level-shifted and slew-rate-adjusted signals to the image sensor.
The TMS3473B allows operation of the CCD image sensor in either the interlace or noninterlace mode. When
the TMS3473B I/N input is connected to V
SS
, the interlace mode is selected (see Figure 1); when I/N is
connected to V
CC
, the noninterlace mode is selected (see Figure 2).
ABOUT follows ABIN and switches between V
ABG+
and V
ABG–
. IAOUT and SAOUT follow IAIN and SAIN,
respectively, and switch between V
CC
and V
SS
. Additionally, ABOUT and IAOUT can each be made to output
midlevel voltages. DC inputs to ABLVL and IALVL determine the midlevel voltages that can be output on ABOUT
and IAOUT, respectively. A high-logic level on MIDSEL causes ABOUT to output its midlevel voltage; a low-logic
level on MIDSEL causes IAOUT to output its midlevel voltage if the interlace mode is selected.
Slew-rate adjustment of IAOUT and ABOUT is accomplished by connecting IASR to V
CC
and ABSR to V
ABG+
through external resistors. The larger the resistor values, the longer the rise and fall times are.
A low-logic level on PD causes the TMS3473B to power down and all outputs to assume their low levels (IAOUT
and SAOUT to V
SS
, ABOUT to V
ABG–
).
The TMS3473B is supplied in a 20-pin surface-mount package (DW) and is characterized for operation from
–20
°
C to 45
°
C.
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, precautions should be taken to avoid application of any voltage higher than maximum-rated voltages to these
high-impedance circuits. During storage or handling, the device leads should be shorted together or the device should be placed in
conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level, preferably either VCC or ground.
Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive
(ESDS) Devices and Assembliesavailable from Texas Instruments.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
IALVL
I/N
IAIN
ABIN
MIDSEL
SAIN
PD
GND
V
ABG+
V
SS
V
SS
IASR
ABSR
V
CC
ABLVL
IAOUT
ABOUT
SAOUT
V
CC
V
ABG–
DW PACKAGE
(TOP VIEW)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TI is a trademark of Texas Instruments Incorporated.
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