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參數(shù)資料
| 型號： | TMS427400 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| 中文描述： | 4194304 - Word的4位高速DRAM等 |
| 文件頁數(shù)： | 1/30頁 |
| 文件大?。?/td> | 441K |
| 代理商： | TMS427400 |
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Electrical characteristics for TMS416400/P and
TMS417400/P is Production Data. Electrical
characteristics
for
TMS427400/P is Product Preview only.
Organization . . . 4194304
×
4
Single 5 V Power Supply for TMS41x400/P
(
±
10% Tolerance)
Single 3.3 V Power Supply for
TMS42x400/P (
±
0.3 V Tolerance)
Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME
TIME
tRAC
tCAC
MAX
’4xx400/P-60
60 ns
15 ns
’4xx400/P-70
70 ns
18 ns
’4xx400/P-80
80 ns
20 ns
Enhanced Page-Mode Operation With
CAS-Before-RAS (CBR) Refresh
Long Refresh Period and Self-Refresh
Option (TMS4xx400P)
3-State Unlatched Output
Low Power Dissipation
High-Reliability Plastic 24/26-Lead
300-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package and 24/26-Lead
Surface-Mount Thin Small-Outline Package
(TSOP)
Operating Free-Air Temperature Range:
0
°
C to 70
°
C
EPIC
(Enhanced Performance Implanted
CMOS) Technology
TMS426400/P
and
TIME
tAA
MAX
30 ns
35 ns
40 ns
WRITE
CYCLE
MIN
110 ns
130 ns
150 ns
MAX
AVAILABLE OPTIONS
DEVICE
POWER
SUPPLY
SELF
REFRESH
BATTERY
BACKUP
—
Yes
—
Yes
—
Yes
—
Yes
REFRESH
CYCLES
TMS416400
TMS416400P
TMS417400
TMS417400P
TMS426400
TMS426400P
TMS427400
TMS427400P
5 V
5 V
5 V
5 V
3.3 V
3.3 V
3.3 V
3.3 V
4096 in 64 ms
4096 in 128 ms
2048 in 32 ms
2048 in 128 ms
4096 in 64 ms
4096 in 128 ms
2048 in 32 ms
2048 in 128 ms
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines
are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.
See Available Options Table
PIN NOMENCLATURE
A0–A11
CAS
DQ1–DQ4
OE
NC
RAS
VCC
VSS
W
Address Inputs
Column-Address Strobe
Data In/Data Out
Output Enable
No Internal Connection
Row-Address Strobe
5-V or 3.3-V Supply
Ground
Write Enable
DJ PACKAGE
(TOP VIEW)
V
CC
DQ1
DQ2
W
RAS
A11
A0
A1
A2
A3
V
CC
V
SS
DQ4
DQ3
CAS
OE
A9
A7
A6
A5
A4
V
SS
26
25
24
23
22
21
18
17
16
15
14
1
2
3
4
5
6
9
10
11
12
13
A10
A8
19
8
DGA PACKAGE
(TOP VIEW)
V
CC
DQ1
DQ2
W
RAS
A11
A0
A1
A2
A3
V
CC
V
SS
DQ4
DQ3
CAS
OE
A9
A7
A6
A5
A4
V
SS
26
25
24
23
22
21
18
17
16
15
14
1
2
3
4
5
6
9
10
11
12
13
A10
A8
19
8
A11 is NC for TMS4x7400/P.
description
The TMS4xx400 is a set of high-speed,
16777216-bit dynamic random-access memories
organized as 4194304 words of 4 bits each. The
TMS4xx400P series are high-speed, low-power,
self-refresh, 16777216-bit dynamic random-
access memories organized as 4194304 words of
4 bits each. The TMS4xx400 and TMS4xx400P
employ
state-of-the-art
Performance Implanted CMOS) technology for
high performance, reliability, and low power.
EPIC
(Enhanced
UNLESS OTHERWISE NOTED this document contains PRODUCTION
DATA information current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty.
parameters.
Copyright
1995, Texas Instruments Incorporated
EPIC is a trademark of Texas Instruments Incorporated.
相關PDF資料 |
PDF描述 |
|---|---|
| TMS427400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409ADJ-60 | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS426409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TMS427400P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409ADGA-60 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS428160 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
| TMS428160P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
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