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參數資料
| 型號： | TN0106 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V，低門限2.0V，N溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（60V的擊穿電壓，2.0V的低門限，?溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | TN0106 |
7-35
7
Low Threshold
TN0106
TN0110
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
I
D(ON)
(min)
V
GS(th)
(max)
TO-92
Die
3.0
3.0
2A
2.0V
TN0106N3
—
100V
2A
2.0V
TN0110N3
TN0110ND
MIL visual screening available
Features
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
I
I
Low threshold — 2.0V max.
I
I
High input impedance
I
I
Low input capacitance — 50pF typical
I
I
Fast switching speeds
I
I
Low on resistance
I
I
Free from secondary breakdown
I
I
Low input and output leakage
I
I
Complementary N- and P-channel devices
Applications
I
I
Logic level interfaces – ideal for TTL and CMOS
I
I
Solid state relays
I
I
Battery operated systems
I
I
Photo voltaic drives
I
I
Analog switches
I
I
General purpose line drivers
I
I
Telecom switches
Note: See Package Outline section for dimensions.
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-92
S G D
相關PDF資料 |
PDF描述 |
|---|---|
| TN0110 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V，低門限2.0V，N溝道增強型垂直DMOS結構場效應管) |
| TN0200K | CONNECTOR ACCESSORY |
| TN0200T | N-Channel 20-V (D-S) MOSFETs |
| TN0200TS | N-Channel 20-V (D-S) MOSFETs |
| TN0200T | N-Channel Enhancement-Mode MOSFET(N溝道增強型MOSFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TN0106N3 | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0106N3-G | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0106N3-G P002 | 功能描述:MOSFET N-CH Enhancmnt Mode MOSFET RoHS:否 制造商:Supertex 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續電流: 電阻汲極/源極 RDS（導通）: 配置: 最大工作溫度: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| TN0106N3-G P003 | 功能描述:MOSFET N-Channel DMOS FET Low Threshold 2.0V RoHS:否 制造商:Supertex 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續電流: 電阻汲極/源極 RDS（導通）: 配置: 最大工作溫度: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| TN0106N3-G P005 | 制造商:Supertex Inc 功能描述:MOSFET N-CH Enhancmnt Mode MOSFET |
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