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參數(shù)資料
| 型號： | TN0401L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓40V，夾斷電流0.64A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET晶體管（最小漏源擊穿電壓40V的，夾斷電流0.64A的N溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 76K |
| 代理商： | TN0401L |
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
Document Number: 70199
S-58620—Rev. D, 21-Jun-99
www.siliconix.com FaxBack 408-970-5600
1
N-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
TN0201L
20
1.2 @ V
GS
= 10 V
0.5 to 2
0.64
TN0401L
40
1.2 @ V
GS
= 10 V
0.5 to 2
0.64
VN0300L
30
1.2 @ V
GS
= 10 V
0.8 to 2.5
0.64
VN0300LS
30
1.2 @ V
GS
= 10 V
0.8 to 2.5
0.67
Low On-Resistance: 0.85
Low Threshold: 1.4 V
Low Input Capacitance: 38 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Top View
TO-226AA
(TO-92)
S
D
G
1
2
3
TO-92S
Top View
S
D
G
1
2
3
TN0201L
TN0401L
VN0300L
VN0300LS
Parameter
Symbol
TN0201L
TN0401L
VN0300L
VN0300LS
Unit
Drain-Source Voltage
V
DS
20
40
30
30
V
Gate-Source Voltage
V
GS
20
20
30
30
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
I
D
0.64
0.64
0.64
0.67
A
T
A
= 100 C
0.38
0.38
0.38
0.43
Pulsed Drain Current
a
I
DM
1.5
1.5
3
3
Power Dissipation
T
A
= 25 C
P
D
0.8
0.8
0.8
0.9
W
T
A
= 100 C
0.32
0.32
0.32
0.4
Maximum Junction-to-Ambient
R
thJA
156
156
156
156
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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