- 您現在的位置：買賣IC網 > PDF目錄382649 > TN0602WG TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | SO PDF資料下載
參數資料
| 型號： | TN0602WG |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）決策支持系統(tǒng)|蘇 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 32K |
| 代理商： | TN0602WG |
7-48
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
1.0A
4.6A
1.0A
4.6A
SOW-20
*
I
D
(continuous) is limited by max rated T
j
.
Refer to Arrays & Special Functions Section.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
TN0604
40
TN0602
20
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.6
1.6
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 2.5mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.8
-4.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
ON-State Drain Current
1.5
2.1
4.0
7.0
R
DS(ON)
TO-92/SOW-20
1.0
1.6
V
GS
= 5V, I
D
= 0.75A
TO-92
0.6
0.75
V
GS
= 10V, I
D
= 1.5A
SOW - 20
1.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.5
0.75
%/
°
C
V
GS
= 10V, I
D
= 1.5A
V
DS
= 20V, I
D
= 1.5A
V
GS
= 0V, V
DS
= 20V
f = 1 MHz
0.5
0.8
Input Capacitance
140
190
Common Source Output Capacitance
75
110
pF
Reverse Transfer Capacitance
25
50
Turn-ON Delay Time
10
Rise Time
6.0
Turn-OFF Delay Time
25
Fall Time
20
Diode Forward Voltage Drop
1.2
1.8
V
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1A
Reverse Recovery Time
300
ns
Notes
:
1: All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
V
V
GS
= 0V, I
D
= 2.0mA
A
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
V
DD
= 20V
I
D
= 0.5A
R
GEN
= 25
ns
TN0602/TN0604
Static Drain-to-Source
ON-State Resistance
Drain-to-Source
Breakdown Voltage
相關PDF資料 |
PDF描述 |
|---|---|
| TN0635N3 | TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 200MA I(D) | TO-92 |
| TN0640N3 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 200MA I(D) | TO-92 |
| TN1206L | BEND PRTECTR RG59/62 BLU 10 PK |
| TN1625 | 16A SCRS |
| TN17 | TERMINATOR BNC F RG59 75 OHM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TN0604 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET |
| TN0604_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET |
| TN0604N3 | 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0604N3-G | 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0604N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。